Hybrid silicon-organic nanoparticle memory device

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dc.contributor.author Kolliopoulou, S en
dc.contributor.author Dimitrakis, P en
dc.contributor.author Normand, P en
dc.contributor.author Zhang, H-L en
dc.contributor.author Cant, N en
dc.contributor.author Evans, SD en
dc.contributor.author Paul, S en
dc.contributor.author Pearson, C en
dc.contributor.author Molloy, A en
dc.contributor.author Petty, MC en
dc.contributor.author Tsoukalas, D en
dc.date.accessioned 2014-03-01T01:19:01Z
dc.date.available 2014-03-01T01:19:01Z
dc.date.issued 2003 en
dc.identifier.issn 0021-8979 en
dc.identifier.uri http://hdl.handle.net/123456789/15332
dc.subject.classification Physics, Applied en
dc.subject.other Electric potential en
dc.subject.other Electrodes en
dc.subject.other Gold en
dc.subject.other Nanostructured materials en
dc.subject.other Nonvolatile storage en
dc.subject.other Silica en
dc.subject.other Charge storage en
dc.subject.other PROM en
dc.title Hybrid silicon-organic nanoparticle memory device en
heal.type journalArticle en
heal.identifier.primary 10.1063/1.1604962 en
heal.identifier.secondary http://dx.doi.org/10.1063/1.1604962 en
heal.language English en
heal.publicationDate 2003 en
heal.abstract We demonstrate a nonvolatile electrically erasable programmable read-only memory device using gold nanoparticles as charge storage elements deposited at room temperature by chemical processing. The nanoparticles are deposited over a thermal silicon dioxide layer that insulates them from the device silicon channel. An organic insulator deposited by the Langmuir-Blodget technique at room temperature separates the aluminum gate electrode from the nanoparticles. The device exhibits significant threshold voltage shifts after application of low-voltage pulses (less than or equal to+/-6 V) to the gate and has nonvolatile retention time characteristics. (C) 2003 American Institute of Physics. en
heal.publisher AMER INST PHYSICS en
heal.journalName Journal of Applied Physics en
dc.identifier.doi 10.1063/1.1604962 en
dc.identifier.isi ISI:000185664300078 en
dc.identifier.volume 94 en
dc.identifier.issue 8 en
dc.identifier.spage 5234 en
dc.identifier.epage 5239 en

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