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Oxidation of nitrogen-implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate

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dc.contributor.author Skarlatos, D en
dc.contributor.author Tsamis, C en
dc.contributor.author Tsoukalas, D en
dc.date.accessioned 2014-03-01T01:19:24Z
dc.date.available 2014-03-01T01:19:24Z
dc.date.issued 2003 en
dc.identifier.issn 0021-8979 en
dc.identifier.uri http://hdl.handle.net/123456789/15470
dc.subject.classification Physics, Applied en
dc.subject.other Crystal defects en
dc.subject.other Diffusion en
dc.subject.other Electronic equipment en
dc.subject.other Nitrogen en
dc.subject.other Oxidation en
dc.subject.other Reaction kinetics en
dc.subject.other Silica en
dc.subject.other Thermal effects en
dc.subject.other Nitrogen implantation en
dc.subject.other Silicon wafers en
dc.title Oxidation of nitrogen-implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate en
heal.type journalArticle en
heal.identifier.primary 10.1063/1.1535260 en
heal.identifier.secondary http://dx.doi.org/10.1063/1.1535260 en
heal.language English en
heal.publicationDate 2003 en
heal.abstract It is well known that nitrogen implantation in silicon leads in reduction of the SiO2 thickness in implanted wafers, which makes this a very promising technique for present and future device processing. In this work we investigate the influence of the implantation energy on oxidation kinetics in nitrogen-implanted silicon. Nitrogen was implanted in silicon wafers at low (3 keV), and medium (25, 80, and 150 keV) energies and oxidations were performed at various temperatures (800-900degreesC) and times. The experiment shows that the decrease in the oxide thickness is smaller when nitrogen is implanted closer to the silicon surface. We attribute this to nitrogen out-diffusion during the ramping and the initial oxidation steps, which is more effective when nitrogen is placed closer to the surface. Additional experiments varying the ramping time support this explanation. An additional study of the growth of extended defects under the different implantation conditions has been performed. This study enabled the estimation of an energy-dose "window," in which we can observe very small oxide thickness (25-40Angstrom) without extended defects formation. (C) 2003 American Institute of Physics. [DOI: 10.1063/1.1535260]. en
heal.publisher AMER INST PHYSICS en
heal.journalName Journal of Applied Physics en
dc.identifier.doi 10.1063/1.1535260 en
dc.identifier.isi ISI:000180630200080 en
dc.identifier.volume 93 en
dc.identifier.issue 3 en
dc.identifier.spage 1832 en
dc.identifier.epage 1838 en


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