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Raman and photoreflectance study of CuIn1 - xGaxSe2 epitaxial layers

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dc.contributor.author Theodoropoulou, S en
dc.contributor.author Papadimitriou, D en
dc.contributor.author Rega, N en
dc.contributor.author Siebentritt, S en
dc.contributor.author Lux-Steiner, MCh en
dc.date.accessioned 2014-03-01T01:25:01Z
dc.date.available 2014-03-01T01:25:01Z
dc.date.issued 2006 en
dc.identifier.issn 0040-6090 en
dc.identifier.uri http://hdl.handle.net/123456789/17512
dc.subject Band gap energy (RT and LT) en
dc.subject CuIn1 - xGaxSe2 en
dc.subject Photoreflectance en
dc.subject Raman en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Materials Science, Coatings & Films en
dc.subject.classification Physics, Applied en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other Electric excitation en
dc.subject.other Epitaxial growth en
dc.subject.other Optical properties en
dc.subject.other Phonons en
dc.subject.other Raman spectroscopy en
dc.subject.other Selenium en
dc.subject.other Spectroscopic analysis en
dc.subject.other Thermal effects en
dc.subject.other Band gap energy en
dc.subject.other Band gap energy (RT and LT) en
dc.subject.other CuIn1 - xGaxSe2 en
dc.subject.other Photoreflectance en
dc.subject.other Gallium compounds en
dc.title Raman and photoreflectance study of CuIn1 - xGaxSe2 epitaxial layers en
heal.type journalArticle en
heal.identifier.primary 10.1016/j.tsf.2005.11.064 en
heal.identifier.secondary http://dx.doi.org/10.1016/j.tsf.2005.11.064 en
heal.language English en
heal.publicationDate 2006 en
heal.abstract The structural and optical properties of CuIn1-xGaxSe2 epitaxial layers were studied in dependence of composition by Photoreflectance (PR) spectroscopy at room and low temperatures and by Raman spectroscopy at room temperature. For compositions with [Ga]/([In]+[Ga]) varying between 0.08 and 0.82, the band gap, determined by fitting the PR-spectra with a third derivative functional form, shows a quadratic dependence on composition. The Raman spectra, recorded under excitation with a vertically polarized Kr+-laser beam operated at the 647.1 nm line in the region 50-700 cm(-1), consist mainly of peaks assigned to the A(1)- and B-2-phonon modes. The A(1)-mode dominates the spectra and shifts linearly, with the increase of the [Ga]/([In]+[Ga]) content, from 172 cm(-1) (A(1)-mode frequency of CuInSe2) to 181 cm(-1) (A,-mode frequency of CuGaSe2). Combining the Raman and PR-data, an analytical expression has been derived which correlates the band gap energy with the A(1) Raman mode frequency for a given composition of the quaternary compound. (c) 2005 Elsevier B.V. All rights reserved. en
heal.publisher ELSEVIER SCIENCE SA en
heal.journalName Thin Solid Films en
dc.identifier.doi 10.1016/j.tsf.2005.11.064 en
dc.identifier.isi ISI:000238249000132 en
dc.identifier.volume 511-512 en
dc.identifier.spage 690 en
dc.identifier.epage 694 en


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