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Role of low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates

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dc.contributor.author Pandis, Ch en
dc.contributor.author Brilis, N en
dc.contributor.author Tsamakis, D en
dc.contributor.author Ali, HA en
dc.contributor.author Krishnamoorthy, S en
dc.contributor.author Iliadis, AA en
dc.date.accessioned 2014-03-01T01:25:06Z
dc.date.available 2014-03-01T01:25:06Z
dc.date.issued 2006 en
dc.identifier.issn 0038-1101 en
dc.identifier.uri http://hdl.handle.net/123456789/17542
dc.subject Hydrogen effect en
dc.subject Native defects en
dc.subject P-type ZnO en
dc.subject PLD en
dc.subject Undoped en
dc.subject.classification Engineering, Electrical & Electronic en
dc.subject.classification Physics, Applied en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other Electric conductivity en
dc.subject.other Electric properties en
dc.subject.other Oxides en
dc.subject.other Pressure effects en
dc.subject.other Silicon en
dc.subject.other Substrates en
dc.subject.other Thermal conductivity en
dc.subject.other Thin films en
dc.subject.other Hydrogen effects en
dc.subject.other Native defects en
dc.subject.other P-type ZnO en
dc.subject.other Undoped en
dc.subject.other Pulsed laser deposition en
dc.title Role of low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates en
heal.type journalArticle en
heal.identifier.primary 10.1016/j.sse.2006.04.025 en
heal.identifier.secondary http://dx.doi.org/10.1016/j.sse.2006.04.025 en
heal.language English en
heal.publicationDate 2006 en
heal.abstract Undoped ZnO thin films have been grown on (100) Si substrates by pulsed laser deposition. The effect of growth parameters such as temperature, O-2 partial pressure and laser fluence on the structural and electrical properties of the films has been investigated. It is shown that the well-known native n-type conductivity, attributed to the activation of hydrogenic donor states, exhibits a conversion from n-type to p-type when the O-2 partial pressure is reduced from 10(-4) to 10(-7) Torr at growth temperatures lower than 400 degrees C. The p-type conductivity could be attributed to the dominant role of the acceptor Zn vacancies for ZnO films grown at very low O-2 pressures. (c) 2006 Elsevier Ltd. All rights reserved. en
heal.publisher PERGAMON-ELSEVIER SCIENCE LTD en
heal.journalName Solid-State Electronics en
dc.identifier.doi 10.1016/j.sse.2006.04.025 en
dc.identifier.isi ISI:000239499400035 en
dc.identifier.volume 50 en
dc.identifier.issue 6 en
dc.identifier.spage 1119 en
dc.identifier.epage 1123 en


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