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Simple method for the fabrication of a high dielectric constant metal-oxide-semiconductor capacitor embedded with Pt nanoparticles

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dc.contributor.author Sargentis, Ch en
dc.contributor.author Giannakopoulos, K en
dc.contributor.author Travlos, A en
dc.contributor.author Boukos, N en
dc.contributor.author Tsamakis, D en
dc.date.accessioned 2014-03-01T01:25:09Z
dc.date.available 2014-03-01T01:25:09Z
dc.date.issued 2006 en
dc.identifier.issn 0003-6951 en
dc.identifier.uri http://hdl.handle.net/123456789/17563
dc.subject.classification Physics, Applied en
dc.subject.other Electron-beam (e-beam) evaporation en
dc.subject.other High- k dielectrics en
dc.subject.other High-frequency capacitance-voltage (C-V) measurements en
dc.subject.other Nanoparticles en
dc.subject.other Capacitance en
dc.subject.other Deposition en
dc.subject.other Dielectric materials en
dc.subject.other Electron beams en
dc.subject.other Nanostructured materials en
dc.subject.other Permittivity en
dc.subject.other Platinum en
dc.subject.other Thin films en
dc.subject.other MOS capacitors en
dc.title Simple method for the fabrication of a high dielectric constant metal-oxide-semiconductor capacitor embedded with Pt nanoparticles en
heal.type journalArticle en
heal.identifier.primary 10.1063/1.2174099 en
heal.identifier.secondary http://dx.doi.org/10.1063/1.2174099 en
heal.identifier.secondary 073106 en
heal.language English en
heal.publicationDate 2006 en
heal.abstract We present a simple method for the fabrication of Pt nanoparticles embedded in a high- k dielectric. The nanoparticles are formed during the first deposition stages of a thin Pt layer on a 30 Å Si O2 tunneling layer, at room temperature, performed with electron-beam (e-beam) evaporation of metallic Pt. Then, the nanoparticles are covered, in situ, by a thicker Hf O2 layer, which forms a control oxide. The fabricated nanoparticles have an average diameter of 4.9 nm, sheet density of 3.2× 1012 cm-2 and they present high uniformity in their size. High-frequency capacitance-voltage (C-V) measurements demonstrate that this structure operates as a memory device. © 2006 American Institute of Physics. en
heal.publisher AMER INST PHYSICS en
heal.journalName Applied Physics Letters en
dc.identifier.doi 10.1063/1.2174099 en
dc.identifier.isi ISI:000235393700087 en
dc.identifier.volume 88 en
dc.identifier.issue 7 en


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