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Structural and electrical characterization of barium strontium titanate films prepared by sol-gel technique on brass (CuZn) substrate

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dc.contributor.author Kribalis, S en
dc.contributor.author Tsakiridis, PE en
dc.contributor.author Dedeloudis, C en
dc.contributor.author Hristoforou, E en
dc.date.accessioned 2014-03-01T01:25:12Z
dc.date.available 2014-03-01T01:25:12Z
dc.date.issued 2006 en
dc.identifier.issn 1454-4164 en
dc.identifier.uri http://hdl.handle.net/123456789/17592
dc.relation.uri http://www.scopus.com/inward/record.url?eid=2-s2.0-33748067325&partnerID=40&md5=0b8b3f90b6daa7ae5dc501842431abe4 en
dc.subject Barium titanate en
dc.subject Resistivity en
dc.subject Sol-gel en
dc.subject Strontium en
dc.subject Thin films en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Optics en
dc.subject.classification Physics, Applied en
dc.subject.other DIELECTRIC-PROPERTIES en
dc.subject.other THIN-FILMS en
dc.subject.other PTCR CERAMICS en
dc.subject.other BATIO3 en
dc.subject.other SRTIO3 en
dc.subject.other CAPACITOR en
dc.title Structural and electrical characterization of barium strontium titanate films prepared by sol-gel technique on brass (CuZn) substrate en
heal.type journalArticle en
heal.language English en
heal.publicationDate 2006 en
heal.abstract The crystal structure, surface morphology and electrical properties of polycrystalline (Ba,Sr)TiO3 films were investigated. The barium strontium titanate (BST) films were prepared by sol-gel processing using barium acetate (Ba(CH3COO)(2)), strontium acetate (Sr(CH3COO)(2)) and titanium isopropoxide (Ti(OC3H7)(4)) as starting materials. Acetic acid and acetylacetone were selected as solvents. Six different types of gels were prepared, increasing the Sr2+ content from 0% to 50%. The films were deposited on brass (CuZn) substrate and then sintered at 750 degrees C for 2 h and annealed at 500 C for 1h. The single layer thickness of the films was about 10 pm. The surface morphology of the film was observed using a scanning electron microscope (SEM). X-ray diffraction (XRD) results show that the film exhibits a pure perovskite phase. The temperature dependence of resistance of films has been investigated and the results showed that the room-temperature resistivity decreases by increasing the Sr2+ content. In all cases the films showed a large negative temperature coefficient of resistivity, apart from the ferroelectric transition temperature where a PTCR peak response also appears. Such large temperature coefficient is attributed to the zinc and copper oxides, formed on the CuZn substrate due to its oxidation at elevated temperature, thus offering a significant temperature dependence effect for possible use in sensing applications. en
heal.publisher NATL INST OPTOELECTRONICS en
heal.journalName Journal of Optoelectronics and Advanced Materials en
dc.identifier.isi ISI:000239874400029 en
dc.identifier.volume 8 en
dc.identifier.issue 4 en
dc.identifier.spage 1475 en
dc.identifier.epage 1478 en


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