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A scalable advanced RF IC design-oriented MOSFET model

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dc.contributor.author Bucher, M en
dc.contributor.author Bazigos, A en
dc.contributor.author Yoshitomi, S en
dc.contributor.author Itoh, N en
dc.date.accessioned 2014-03-01T01:27:47Z
dc.date.available 2014-03-01T01:27:47Z
dc.date.issued 2008 en
dc.identifier.issn 1096-4290 en
dc.identifier.uri http://hdl.handle.net/123456789/18575
dc.subject Analogue/RF IC design en
dc.subject Compact model en
dc.subject MOSFET en
dc.subject NQS effect en
dc.subject RF modelling en
dc.subject Scaling en
dc.subject.classification Computer Science, Interdisciplinary Applications en
dc.subject.classification Engineering, Electrical & Electronic en
dc.subject.other Bias conditions en
dc.subject.other Channel lengths en
dc.subject.other CMOS technologies en
dc.subject.other Compact modeling en
dc.subject.other Large range en
dc.subject.other Long channel devices en
dc.subject.other MOSFET modeling en
dc.subject.other Parasitics en
dc.subject.other Quasi Static en
dc.subject.other RF IC design en
dc.subject.other RF measurements en
dc.subject.other Scaling behaviour en
dc.subject.other Short channel devices en
dc.subject.other MOSFET devices en
dc.title A scalable advanced RF IC design-oriented MOSFET model en
heal.type journalArticle en
heal.identifier.primary 10.1002/mmce.20288 en
heal.identifier.secondary http://dx.doi.org/10.1002/mmce.20288 en
heal.language English en
heal.publicationDate 2008 en
heal.abstract This article presents a validation of the EKV3 MOSFET compact model dedicated to the design of analogue/RF ICs using advanced CMOS technology. The EKV3 model is compared with DC, CV and RF measurements up to 20 GHz of a 110 nm CMOS technology. The scaling behaviour over a large range of channel lengths and bias conditions is presented. Long-channel devices show significant non-quasi static effects while in short-channel devices the parasitics modelling is critical. This is illustrated with Y-parameters and f(t) vs. I-D in NMOS and PMOS devices, showing good overall RF modelling abilities of the EKV3 MOSFET model. (C) 2008 Wiley Periodicals, Inc. en
heal.publisher JOHN WILEY & SONS INC en
heal.journalName International Journal of RF and Microwave Computer-Aided Engineering en
dc.identifier.doi 10.1002/mmce.20288 en
dc.identifier.isi ISI:000256995800003 en
dc.identifier.volume 18 en
dc.identifier.issue 4 en
dc.identifier.spage 314 en
dc.identifier.epage 325 en


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