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Electrical behavior of memory devices based on fluorene-containing organic thin films

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dc.contributor.author Dimitrakis, P en
dc.contributor.author Normand, P en
dc.contributor.author Tsoukalas, D en
dc.contributor.author Pearson, C en
dc.contributor.author Ahn, JH en
dc.contributor.author Mabrook, MF en
dc.contributor.author Zeze, DA en
dc.contributor.author Petty, MC en
dc.contributor.author Kamtekar, KT en
dc.contributor.author Wang, C en
dc.contributor.author Bryce, MR en
dc.contributor.author Green, M en
dc.date.accessioned 2014-03-01T01:28:14Z
dc.date.available 2014-03-01T01:28:14Z
dc.date.issued 2008 en
dc.identifier.issn 0021-8979 en
dc.identifier.uri http://hdl.handle.net/123456789/18776
dc.subject.classification Physics, Applied en
dc.subject.other Amines en
dc.subject.other Electric conductivity en
dc.subject.other Electrolysis en
dc.subject.other Forming en
dc.subject.other Nanoparticles en
dc.subject.other Nanostructured materials en
dc.subject.other Nanostructures en
dc.subject.other Negative resistance en
dc.subject.other Organic compounds en
dc.subject.other Thick films en
dc.subject.other Thin films en
dc.subject.other Electrode structures en
dc.subject.other Fluorene en
dc.subject.other Negative-differential-resistance en
dc.subject.other Organic layers en
dc.subject.other Organic thin films en
dc.subject.other Current voltage characteristics en
dc.title Electrical behavior of memory devices based on fluorene-containing organic thin films en
heal.type journalArticle en
heal.identifier.primary 10.1063/1.2968551 en
heal.identifier.secondary http://dx.doi.org/10.1063/1.2968551 en
heal.identifier.secondary 044510 en
heal.language English en
heal.publicationDate 2008 en
heal.abstract We report on switching and negative differential resistance (NDR) behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-{4-[5-(4-tert-butylphenyl)- 1,3,4-oxadiazol-2-yl]phenyl}-9,9-dihexyl- N,N -diphenyl-fluoren-2-amine. The addition of gold nanoparticles (0.5 wt %) did not change the switching behavior of thicker film structures; however, devices incorporating the nanoparticles showed more reproducible characteristics. In most cases, a ""forming"" process, in which a large positive voltage was applied to the top Al electrode, was required before the NDR and conductivity switching were observed. Three different electrical conductivity mechanisms have been identified: Poole-Frenkel conductivity in unformed structures, linear current versus voltage characteristics for the ON state in formed devices, and superlinear current versus voltage behavior for the OFF state in formed devices. Models based on metallic filaments or on the injection and storage of charge do not explain all our experimental observations satisfactorily. Instead, an explanation based on the formation of nanocrystalline regions within the thin film is suggested. The devices can be used as two-terminal memory cells operating with unipolar voltage pulses. © 2008 American Institute of Physics. en
heal.publisher AMER INST PHYSICS en
heal.journalName Journal of Applied Physics en
dc.identifier.doi 10.1063/1.2968551 en
dc.identifier.isi ISI:000259265100100 en
dc.identifier.volume 104 en
dc.identifier.issue 4 en


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