Non-melting annealing of silicon by CO2 laser

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dc.contributor.author Florakis, A en
dc.contributor.author Verrelli, E en
dc.contributor.author Giubertoni, D en
dc.contributor.author Tzortzis, G en
dc.contributor.author Tsoukalas, D en
dc.date.accessioned 2014-03-01T01:33:56Z
dc.date.available 2014-03-01T01:33:56Z
dc.date.issued 2010 en
dc.identifier.issn 0040-6090 en
dc.identifier.uri http://hdl.handle.net/123456789/20626
dc.subject Boron diffusion en
dc.subject CO2 laser en
dc.subject Dopant activation en
dc.subject Laser annealing en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Materials Science, Coatings & Films en
dc.subject.classification Physics, Applied en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other Activation level en
dc.subject.other Annealing condition en
dc.subject.other Boron concentrations en
dc.subject.other Boron diffusion en
dc.subject.other Boron diffusions en
dc.subject.other Chemical characterization en
dc.subject.other CMOS nodes en
dc.subject.other Dopant activation en
dc.subject.other Dopant concentrations en
dc.subject.other Electrical activation en
dc.subject.other Laser annealing en
dc.subject.other Low energies en
dc.subject.other Plasma implantation en
dc.subject.other Power densities en
dc.subject.other Sheet resistance measurements en
dc.subject.other Short pulse duration en
dc.subject.other Silicon samples en
dc.subject.other Surface temperatures en
dc.subject.other Time-scales en
dc.subject.other Ultra shallow junction en
dc.subject.other Annealing en
dc.subject.other Diffusion in solids en
dc.subject.other Doping (additives) en
dc.subject.other Electric resistance en
dc.subject.other Electric resistance measurement en
dc.subject.other Secondary ion mass spectrometry en
dc.subject.other Boron en
dc.title Non-melting annealing of silicon by CO2 laser en
heal.type journalArticle en
heal.identifier.primary 10.1016/j.tsf.2009.09.140 en
heal.identifier.secondary http://dx.doi.org/10.1016/j.tsf.2009.09.140 en
heal.language English en
heal.publicationDate 2010 en
heal.abstract In this work we investigate CO2. laser annealing at millisecond time scale for the fabrication of Ultra Shallow junctions. able to fulfill the requirements imposed for sub-45 nm CMOS nodes Silicon samples doped with Boron using BF3 plasma implantation technique at low energy (0.4 and 0.6 keV) were used to ensure ultra shallow as implanted boron concentration profiles Our aim is to achieve high electrical activation level of the dopant. while maintaining the Boron concentration profile as immobile as possible Samples have been irradiated at a variety of annealing conditions regarding the duration of the irradiation and the power density, however, in every case the peak surface temperature was kept in the range of 1080-1320 degrees C. Sheet resistance measurements indicate significant enhancement in the activation levels, while chemical characterization by means of SIMS, shows very limited movement of the dopant concentration profile, especially for short pulse duration conditions. (c) 2009 Elsevier B.V. All rights reserved en
heal.publisher ELSEVIER SCIENCE SA en
heal.journalName Thin Solid Films en
dc.identifier.doi 10.1016/j.tsf.2009.09.140 en
dc.identifier.isi ISI:000275615100060 en
dc.identifier.volume 518 en
dc.identifier.issue 9 en
dc.identifier.spage 2551 en
dc.identifier.epage 2554 en

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