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Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation

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dc.contributor.author Normand, P en
dc.contributor.author Tsoukalas, D en
dc.contributor.author Kapetanakis, E en
dc.contributor.author Berg, J en
dc.contributor.author Armour, D en
dc.contributor.author Stoemenos, J en
dc.date.accessioned 2014-03-01T01:45:47Z
dc.date.available 2014-03-01T01:45:47Z
dc.date.issued 1997 en
dc.identifier.uri http://hdl.handle.net/123456789/24727
dc.subject Electrical Properties en
dc.subject High Temperature en
dc.subject Ion Implantation en
dc.subject Low Energy en
dc.subject Silicon Oxide en
dc.subject Transmission Electron Microscopy en
dc.subject High Dose en
dc.subject Metal Oxide Semiconductor en
dc.title Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation en
heal.type journalArticle en
heal.identifier.primary 10.1016/S0167-9317(97)00019-1 en
heal.identifier.secondary http://dx.doi.org/10.1016/S0167-9317(97)00019-1 en
heal.publicationDate 1997 en
heal.abstract Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal-oxide-semiconductor devices are then investigated using dynamic conductance as well as dc current measurements. en
heal.journalName Microelectronic Engineering en
dc.identifier.doi 10.1016/S0167-9317(97)00019-1 en


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