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Structure and Memory Effects of Low Energy Ge-Implanted Thin SiO2 Films

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dc.contributor.author Kapetanakis, E en
dc.contributor.author Normand, P en
dc.contributor.author Tsoukalas, D en
dc.contributor.author Beltsios, K en
dc.contributor.author Travlos, T en
dc.contributor.author Gautier, J en
dc.contributor.author Palun, L en
dc.contributor.author Jourdan, F en
dc.date.accessioned 2014-03-01T01:48:21Z
dc.date.available 2014-03-01T01:48:21Z
dc.date.issued 1999 en
dc.identifier.uri http://hdl.handle.net/123456789/25462
dc.relation.uri http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1505532 en
dc.relation.uri http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=01505532 en
dc.subject Low Energy en
dc.subject Memory Effect en
dc.subject Transmission Electron Microscopy en
dc.title Structure and Memory Effects of Low Energy Ge-Implanted Thin SiO2 Films en
heal.type journalArticle en
heal.publicationDate 1999 en
heal.abstract Thin Si02 films have been implanted with Ge+ ions and subsequently annealed. Transmission electron microscopy results indicate that after annealing at 95()oC Ge remains distributed in a band and not in separate pockets. The charge storage effects of the Ge-implanted gate oxide of MaS capacitors have been studied for accumulation conditions through J-V and C-V measurements. A high positive' voltage en


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