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Novel Si integrated inductor and transformer structures for RF IC design

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dc.contributor.author Koutsoyannopoulos, Yorgos en
dc.contributor.author Papananos, Yannis en
dc.contributor.author Bantas, Sotiris en
dc.contributor.author Alemanni, Carlo en
dc.date.accessioned 2014-03-01T01:48:41Z
dc.date.available 2014-03-01T01:48:41Z
dc.date.issued 1999 en
dc.identifier.issn 02714310 en
dc.identifier.uri http://hdl.handle.net/123456789/25551
dc.relation.uri http://www.scopus.com/inward/record.url?eid=2-s2.0-0032669687&partnerID=40&md5=2ef5ca9c0ebffedfa8b104535e8f94b1 en
dc.subject.other Computer aided design en
dc.subject.other Crosstalk en
dc.subject.other Electric inductors en
dc.subject.other Electric transformers en
dc.subject.other Impedance matching (electric) en
dc.subject.other Three dimensional en
dc.subject.other Integrated inductor en
dc.subject.other Integrated transformers en
dc.subject.other Integrated circuit layout en
dc.title Novel Si integrated inductor and transformer structures for RF IC design en
heal.type journalArticle en
heal.publicationDate 1999 en
heal.abstract Planar and 3D Si passive inductive structures are presented, with respect to their application in RF ICs. The modeling of the structures is realized by the use of a custom CAD tool, SISP. It is shown how, for the first time, fast answers to complex questions can be obtained before fabrication, such as: Inductance boost of up to 600% in three-layer spiral inductors compared to planar ones, with no cost in quality factor; optimization of the insertion and return losses of integrated transformers under area reduction schemes; modeling of practical integrated baluns; effect of physical separation on the crosstalk between inductors. The accuracy of modeling results is established through measurements in an array of fabricated structures. en
heal.publisher IEEE, Piscataway, NJ, United States en
heal.journalName Proceedings - IEEE International Symposium on Circuits and Systems en
dc.identifier.volume 2 en
dc.identifier.spage II en
dc.identifier.epage 573 - II-576 en


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