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Strain-induced nonlinear behavior of electron effective mass in degenerately doped n-Si(P) under high uniaxial pressure X || [111]

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dc.contributor.author Shenderovskii, V en
dc.contributor.author Baidakov, V en
dc.contributor.author Budsuliak, S en
dc.contributor.author Gorin, A en
dc.contributor.author Ermakov, V en
dc.contributor.author Kolomoets, V en
dc.contributor.author Liarokapis, E en
dc.contributor.author Gromova, G en
dc.contributor.author Kazbekova, B en
dc.contributor.author Taimuratova, L en
dc.date.accessioned 2014-03-01T01:58:49Z
dc.date.available 2014-03-01T01:58:49Z
dc.date.issued 2009 en
dc.identifier.issn 03701972 en
dc.identifier.uri http://hdl.handle.net/123456789/28742
dc.title Strain-induced nonlinear behavior of electron effective mass in degenerately doped n-Si(P) under high uniaxial pressure X || [111] en
heal.type journalArticle en
heal.identifier.primary 10.1002/pssb.200880509 en
heal.identifier.secondary http://dx.doi.org/10.1002/pssb.200880509 en
heal.publicationDate 2009 en
heal.abstract The nonlinear behavior of the electron effective mass in degenerately doped n-Si(P) under high uniaxial pressure X || [111] was observed in the range of the strain-induced transition from metallic- to activation-type conductivity. The relative contribution of the quadratic term in the effective mass vs. pressure dependence increases with doping. For just metallic crystals of n-Si(P) the electron effective mass increase is described by only a single quadratic term. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. en
heal.journalName Physica Status Solidi (B) Basic Research en
dc.identifier.doi 10.1002/pssb.200880509 en
dc.identifier.volume 246 en
dc.identifier.issue 3 en
dc.identifier.spage 612 en
dc.identifier.epage 614 en


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