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Design considerations for a highly linear electronically tunable resistor

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dc.contributor.author Vavelidis, K en
dc.contributor.author Tsividis, Y en
dc.date.accessioned 2014-03-01T02:40:58Z
dc.date.available 2014-03-01T02:40:58Z
dc.date.issued 1993 en
dc.identifier.issn 02714310 en
dc.identifier.uri http://hdl.handle.net/123456789/30300
dc.subject.other Linear control systems en
dc.subject.other MOSFET devices en
dc.subject.other Numerical analysis en
dc.subject.other Signal processing en
dc.subject.other Tuning en
dc.subject.other Automatic gain control en
dc.subject.other Electronically tunable resistors en
dc.subject.other Resistors en
dc.title Design considerations for a highly linear electronically tunable resistor en
heal.type conferenceItem en
heal.identifier.primary 10.1109/ISCAS.1993.393938 en
heal.identifier.secondary http://dx.doi.org/10.1109/ISCAS.1993.393938 en
heal.publicationDate 1993 en
heal.abstract Design considerations are presented for a recently proposed linear, electronically tunable resistor. A MOSFET is converted into a highly linear resistor by the application of voltages in such a way that the gate-channel and body-channel potentials remain constant all along the channel independently of the signals. en
heal.publisher Publ by IEEE, Piscataway, NJ, United States en
heal.journalName Proceedings - IEEE International Symposium on Circuits and Systems en
dc.identifier.doi 10.1109/ISCAS.1993.393938 en
dc.identifier.volume 2 en
dc.identifier.spage 1183 en


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