Raman study of ion-implanted hydrogenated amorphous silicon

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dc.contributor.author Danesh, P en
dc.contributor.author Pantchev, B en
dc.contributor.author Liarokapis, E en
dc.contributor.author Schmidt, B en
dc.date.accessioned 2014-03-01T02:42:20Z
dc.date.available 2014-03-01T02:42:20Z
dc.date.issued 2003 en
dc.identifier.issn 0957-4522 en
dc.identifier.uri http://hdl.handle.net/123456789/30945
dc.subject Amorphous Silicon en
dc.subject Hydrogen Atom en
dc.subject Hydrogenated Amorphous Silicon en
dc.subject Ion Implantation en
dc.subject Raman Spectroscopy en
dc.subject Structural Properties en
dc.subject Short Range Order en
dc.subject.classification Engineering, Electrical & Electronic en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other Chemical bonds en
dc.subject.other Crystal structure en
dc.subject.other Hydrogenation en
dc.subject.other Ion implantation en
dc.subject.other Raman spectroscopy en
dc.subject.other Bond length en
dc.subject.other Amorphous silicon en
dc.title Raman study of ion-implanted hydrogenated amorphous silicon en
heal.type conferenceItem en
heal.identifier.primary 10.1023/A:1026120213424 en
heal.identifier.secondary http://dx.doi.org/10.1023/A:1026120213424 en
heal.language English en
heal.publicationDate 2003 en
heal.abstract The effect of silicon and hydrogen ion implantations on the structural properties of hydrogenated amorphous silicon films was studied by means of Raman spectroscopy, with the aim of revealing the influence of hydrogen atoms inserted into the silicon matrix on its short-range order. To separate the implantation-induced increase in the structural disorder from the effect of the implanted hydrogen, the implantation doses of silicon and hydrogen ions were selected to create closely similar numbers of host-atom displacements. The results obtained suggest that the presence of hydrogen in amorphous silicon reduces the structural disorder related to variations in the silicon bond length, but affect the bond-angle deviations to a lesser extent. (C) 2003 Kluwer Academic Publishers. en
heal.publisher KLUWER ACADEMIC PUBL en
heal.journalName Journal of Materials Science: Materials in Electronics en
dc.identifier.doi 10.1023/A:1026120213424 en
dc.identifier.isi ISI:000185962400041 en
dc.identifier.volume 14 en
dc.identifier.issue 10-12 en
dc.identifier.spage 753 en
dc.identifier.epage 754 en

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