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Simulation of SiO2 and Si feature etching for microelectronics and microelectromechanical systems fabrication: A combined simulator coupling modules of surface etching, local flux calculation, and profile evolution

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dc.contributor.author Kokkoris, G en
dc.contributor.author Tserepi, A en
dc.contributor.author Boudouvis, AG en
dc.contributor.author Gogolides, E en
dc.date.accessioned 2014-03-01T02:42:58Z
dc.date.available 2014-03-01T02:42:58Z
dc.date.issued 2004 en
dc.identifier.issn 0734-2101 en
dc.identifier.uri http://hdl.handle.net/123456789/31160
dc.subject microelectromechanical system en
dc.subject.classification Materials Science, Coatings & Films en
dc.subject.classification Physics, Applied en
dc.subject.other Aspect ratio en
dc.subject.other Computer simulation en
dc.subject.other Deposition en
dc.subject.other Electric reactors en
dc.subject.other Emission spectroscopy en
dc.subject.other Fluorocarbons en
dc.subject.other Magnetic flux en
dc.subject.other Mathematical models en
dc.subject.other Microelectromechanical devices en
dc.subject.other Microelectronics en
dc.subject.other Optoelectronic devices en
dc.subject.other Plasmas en
dc.subject.other Plastic films en
dc.subject.other Profilometry en
dc.subject.other Reactive ion etching en
dc.subject.other Silica en
dc.subject.other Gas flux en
dc.subject.other Microtrenching en
dc.subject.other Optical emission spectroscopy en
dc.subject.other Polymer films en
dc.subject.other Etching en
dc.title Simulation of SiO2 and Si feature etching for microelectronics and microelectromechanical systems fabrication: A combined simulator coupling modules of surface etching, local flux calculation, and profile evolution en
heal.type conferenceItem en
heal.identifier.primary 10.1116/1.1738660 en
heal.identifier.secondary http://dx.doi.org/10.1116/1.1738660 en
heal.language English en
heal.publicationDate 2004 en
heal.abstract A combined simulator linking gas flux data from a plasma reactor (experimental or simulated) to the feature profile evolution during etching/deposition processes is described. This combined simulator results from the coupling of surface etch, local flux calculation, and profile evolution modules. It is a modular tool, in the sense that different phenomena, surface models, and structures can be incorporated. In this work the combined simulator is applied in two processes: (a) in SiO2 feature etching to simulate reactive ion etching (RIE) lag and inverse RIE lag and (b) in etching of high aspect ratio Si trenches using the Bosch process. The profile evolution algorithm of the combined simulator, namely, the level set method, is applied to a process where etching and deposition occur, and tracking of two materials (Si and polymer formed during the Bosch deposition step) is needed. (C) 2004 American Vacuum Society. en
heal.publisher A V S AMER INST PHYSICS en
heal.journalName Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films en
dc.identifier.doi 10.1116/1.1738660 en
dc.identifier.isi ISI:000223322000142 en
dc.identifier.volume 22 en
dc.identifier.issue 4 en
dc.identifier.spage 1896 en
dc.identifier.epage 1902 en


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