EKV3 parameter extraction and characterization of 90nm RF-CMOS technology

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dc.contributor.author Yoshitomi, S en
dc.contributor.author Bazigos, A en
dc.contributor.author Bucher, M en
dc.date.accessioned 2014-03-01T02:51:05Z
dc.date.available 2014-03-01T02:51:05Z
dc.date.issued 2007 en
dc.identifier.uri http://hdl.handle.net/123456789/35352
dc.subject Compact modelling en
dc.subject EKV3 model en
dc.subject Parameter extraction en
dc.subject RF CMOS en
dc.subject RF parasitics en
dc.subject Scaling en
dc.subject.other Electronics industry en
dc.subject.other Integrated circuits en
dc.subject.other MOSFET devices en
dc.subject.other Networks (circuits) en
dc.subject.other Technology en
dc.subject.other Bias conditions en
dc.subject.other Compact modelling en
dc.subject.other EKV3 model en
dc.subject.other Ga te lengths en
dc.subject.other High frequencies en
dc.subject.other IC designs en
dc.subject.other International conferences en
dc.subject.other MOSFET modeling en
dc.subject.other MOSFETs en
dc.subject.other Number of fingers en
dc.subject.other Parasitics en
dc.subject.other RF CMOS en
dc.subject.other RF parasitics en
dc.subject.other S parameters en
dc.subject.other Scaling en
dc.subject.other Toshiba en
dc.subject.other Variations of en
dc.subject.other Parameter extraction en
dc.title EKV3 parameter extraction and characterization of 90nm RF-CMOS technology en
heal.type conferenceItem en
heal.identifier.primary 10.1109/MIXDES.2007.4286123 en
heal.identifier.secondary http://dx.doi.org/10.1109/MIXDES.2007.4286123 en
heal.identifier.secondary 4286123 en
heal.publicationDate 2007 en
heal.abstract EKV3 is a circuit-design-oriented compact MOSFET model for analog/RF IC design. The paper presents parameter extraction guidelines and modelling using EKV3 for TOSHIBA's 90nm RF-CMOS technology covering DC, CV and RF (S-parameter) and temperature scalability. RF verification was done by the use of multi-finger MOSFETs with many variations of gate length, width of unit fingers and number of fingers. A scalable RF model was successfully created. Extraction of RF parasitics and their scaling with RF layout is investigated. The EKV3 model successfully predicted high-frequency behaviour of 90nm CMOS up to 20GHz over a wide range of bias conditions. Copyright © 2007 by Department of Microelectronics & Computer Science, Technical University of Lodz. en
heal.journalName Proceedings of the 14th International Conference ""Mixed Design of Integrated Circuits and Systems"", MIXDES 2007 en
dc.identifier.doi 10.1109/MIXDES.2007.4286123 en
dc.identifier.spage 74 en
dc.identifier.epage 79 en

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