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Threshold voltage and sub-threshold slope variation with gate-length in Al2O3/InAlAs/InGaAs QW FETs

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dc.contributor.author Tsopelas, AGI en
dc.contributor.author Xanthakis, JP en
dc.date.accessioned 2014-03-01T02:53:30Z
dc.date.available 2014-03-01T02:53:30Z
dc.date.issued 2011 en
dc.identifier.uri http://hdl.handle.net/123456789/36369
dc.subject.other Cap layers en
dc.subject.other Fabricated device en
dc.subject.other Gate length en
dc.subject.other Gate metals en
dc.subject.other Gate oxide en
dc.subject.other InGaAs quantum wells en
dc.subject.other Intensive research en
dc.subject.other Subthreshold en
dc.subject.other Theoretical calculations en
dc.subject.other Aluminum en
dc.subject.other Hafnium oxides en
dc.subject.other MESFET devices en
dc.subject.other Research en
dc.subject.other Semiconducting indium en
dc.subject.other Silicon en
dc.subject.other Silicon compounds en
dc.subject.other Tungsten en
dc.subject.other Current voltage characteristics en
dc.title Threshold voltage and sub-threshold slope variation with gate-length in Al2O3/InAlAs/InGaAs QW FETs en
heal.type conferenceItem en
heal.identifier.primary 10.1109/ISDRS.2011.6135195 en
heal.identifier.secondary 6135195 en
heal.identifier.secondary http://dx.doi.org/10.1109/ISDRS.2011.6135195 en
heal.publicationDate 2011 en
heal.abstract During the last 2-3 years there has been an intensive research on InGaAs quantum well channels [1-4] as a possible alternative to the traditional Si-SiO2 FETs. Both Al2O3 [1-3] and HfO2 [4] are used as gate oxides. The fabricated devices with available current-voltage characteristics in the literature are of long gates. Typically the gate lengths Lg vary from 200 nm to 10 m. These devices however have to be scaled to the 20nm regime if they are to replace the Si-SiO2 system. A theoretical calculation tool that would show the trend from the micrometer values of Lg to the tenths of nm values would be valuable. In this paper we examine theoretically the Al2O3/InGaAs system with a variable gate length Lg. The gate metal is tungsten (W) as employed in the fabricated devices. We will see that it is a very good choice for having the threshold value VT near zero volts. Furthermore, in accordance with experiment, a cap layer of InAlAs-which also acts as a supply layer-is used so that finally our system consists of the layers: W/Al2O3/AlGaAs/InGaAs. This is shown in figure 1 together with the relevant lengths. © 2011 IEEE. en
heal.journalName 2011 International Semiconductor Device Research Symposium, ISDRS 2011 en
dc.identifier.doi 10.1109/ISDRS.2011.6135195 en


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