Threshold voltage and sub-threshold slope variation with gate-length in Al2O3/InAlAs/InGaAs Quantum Well (QW) FET's

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dc.contributor.author Tsopelas, I en
dc.contributor.author Gili, A en
dc.contributor.author Xanthakis, JP en
dc.date.accessioned 2014-03-01T02:54:03Z
dc.date.available 2014-03-01T02:54:03Z
dc.date.issued 2012 en
dc.identifier.issn 10139826 en
dc.identifier.uri http://hdl.handle.net/123456789/36560
dc.subject InGaAs channel en
dc.subject Quantum well FET en
dc.subject Schroedinger - Poisson model en
dc.subject.other Continuity equations en
dc.subject.other Fast switching en
dc.subject.other Gate-length en
dc.subject.other InGaAs channel en
dc.subject.other MOS-FET en
dc.subject.other Poisson model en
dc.subject.other Quantum well en
dc.subject.other Quantum well FET en
dc.subject.other Schottky barriers en
dc.subject.other Subthreshold en
dc.subject.other Subthreshold slope en
dc.subject.other MESFET devices en
dc.subject.other Poisson equation en
dc.subject.other Schottky barrier diodes en
dc.subject.other Schrodinger equation en
dc.subject.other Semiconductor quantum wells en
dc.subject.other Sensors en
dc.subject.other Silicon compounds en
dc.subject.other Threshold voltage en
dc.title Threshold voltage and sub-threshold slope variation with gate-length in Al2O3/InAlAs/InGaAs Quantum Well (QW) FET's en
heal.type conferenceItem en
heal.identifier.primary 10.4028/www.scientific.net/KEM.495.112 en
heal.identifier.secondary http://dx.doi.org/10.4028/www.scientific.net/KEM.495.112 en
heal.publicationDate 2012 en
heal.abstract We have theoretically examined the scaling of the Al2O3/InAlAs/InGaAs QW FET one of the proposed III-V channel MOSFET's designed to replace the conventional SiO2/Si structures. To accomplish this we have used a Schroedinger - Poisson - Continuity equation model that is fully 2- dimentional ie all equations are solved along and perpendicular to the channel. We have found out that for the threshold voltage VT to be around zero volts a Schottky barrier φB of 3.5 - 4.0eV is necessary. Both Cu or W will suffice. for this. The VT value moves by 0.7 as the device is scaled from 65 nm gate length Lg to 25nm. Furthermore, as the Lg is scaled to the desired 20nm value the subthreshold slope SS increases from 90meV/dec to about 170meV/dec guaranteeing fast switching. © (2012) Trans Tech Publications. en
heal.journalName Key Engineering Materials en
dc.identifier.doi 10.4028/www.scientific.net/KEM.495.112 en
dc.identifier.volume 495 en
dc.identifier.spage 112 en
dc.identifier.epage 115 en

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