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Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment (vol 79, pg 7148, 1996)

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dc.contributor.author De Wolf, I en
dc.contributor.author Anastassakis, E en
dc.date.accessioned 2014-03-01T11:45:43Z
dc.date.available 2014-03-01T11:45:43Z
dc.date.issued 1999 en
dc.identifier.issn 0021-8979 en
dc.identifier.uri http://hdl.handle.net/123456789/37587
dc.subject.classification Physics, Applied en
dc.title Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment (vol 79, pg 7148, 1996) en
heal.type other en
heal.language English en
heal.publicationDate 1999 en
heal.abstract Micro-Raman spectroscopy is often applied to measure local mechanical stress in silicon microelectronics devices. A procedure was proposed [De Wolf et al., J. Appl. Phys. 79, 7148 (1996)] for deriving quantitative information about the stress from the Raman spectra. The calculations were shown to be less tedious when performed in the reference system of the sample, as suggested by Anastassakis [Light Scattering in Semiconductor Structures and Superlattices, (Plenum, New York, 1991), p. 173]. However, there are a few errors in some equations in De Wolf et al. We give here the correct equations, and discuss the consequences of the errors. An alternative convenient approach is recommended. (C) 1999 American Institute of Physics. [S0021-8979(99)03510-0]. en
heal.publisher AMER INST PHYSICS en
heal.journalName JOURNAL OF APPLIED PHYSICS en
dc.identifier.isi ISI:000080136000075 en
dc.identifier.volume 85 en
dc.identifier.issue 10 en
dc.identifier.spage 7484 en
dc.identifier.epage 7485 en


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