Strain profiles in overcritical (001) ZnSe/GaAs heteroepitaxial layers

Kontos, AG; Anastassakis, E; Chrysanthakopoulos, N; Calamiotou, M; Pohl, UW

dc.contributor.author	Kontos, AG	en
dc.contributor.author	Anastassakis, E	en
dc.contributor.author	Chrysanthakopoulos, N	en
dc.contributor.author	Calamiotou, M	en
dc.contributor.author	Pohl, UW	en
dc.date.accessioned	2014-03-01T01:15:15Z
dc.date.available	2014-03-01T01:15:15Z
dc.date.issued	1999	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13391
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0032613894&partnerID=40&md5=c08034345ac78de9c82f4439fcac03c2	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Interfaces (materials)	en
dc.subject.other	Mathematical models	en
dc.subject.other	Metallorganic vapor phase epitaxy	en
dc.subject.other	Multilayers	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Semiconducting gallium arsenide	en
dc.subject.other	Semiconducting zinc compounds	en
dc.subject.other	Strain hardening	en
dc.subject.other	Stress relaxation	en
dc.subject.other	Thermal stress	en
dc.subject.other	X ray diffraction analysis	en
dc.subject.other	Semiconductor epilayers	en
dc.subject.other	Heterojunctions	en
dc.title	Strain profiles in overcritical (001) ZnSe/GaAs heteroepitaxial layers	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1999	en
heal.abstract	ZnSe layers of various thicknesses have been grown epitaxially on (001)-oriented GaAs substrates by metalorganic vapor phase epitaxy and studied by x-ray diffraction and Raman scattering. Consistent results have been found for the in-plane strains of both, ZnSe layers below and above the critical value of plastic relaxation. The experimental results are well described by strain profiles which are evaluated by an energy model and a geometrical model including the effects of strain and work hardening. The thickness-dependent full widths at half maximum of the x-ray reflections and the Raman resonances are accounted for by assuming uncorrelated misfit dislocations in the layers. (C) 1999 American Institute of Physics. [S0021-8979(99)00813-0].	en
heal.publisher	American Institute of Physics Inc., Woodbury, NY, United States	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.isi	ISI:000080856300050	en
dc.identifier.volume	86	en
dc.identifier.issue	1	en
dc.identifier.spage	412	en
dc.identifier.epage	417	en