Strain profiles in overcritical (001) ZnSe/GaAs heteroepitaxial layers

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dc.contributor.author Kontos, AG en
dc.contributor.author Anastassakis, E en
dc.contributor.author Chrysanthakopoulos, N en
dc.contributor.author Calamiotou, M en
dc.contributor.author Pohl, UW en
dc.date.accessioned 2014-03-01T01:15:15Z
dc.date.available 2014-03-01T01:15:15Z
dc.date.issued 1999 en
dc.identifier.issn 0021-8979 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/13391
dc.relation.uri http://www.scopus.com/inward/record.url?eid=2-s2.0-0032613894&partnerID=40&md5=c08034345ac78de9c82f4439fcac03c2 en
dc.subject.classification Physics, Applied en
dc.subject.other Interfaces (materials) en
dc.subject.other Mathematical models en
dc.subject.other Metallorganic vapor phase epitaxy en
dc.subject.other Multilayers en
dc.subject.other Raman spectroscopy en
dc.subject.other Semiconducting gallium arsenide en
dc.subject.other Semiconducting zinc compounds en
dc.subject.other Strain hardening en
dc.subject.other Stress relaxation en
dc.subject.other Thermal stress en
dc.subject.other X ray diffraction analysis en
dc.subject.other Semiconductor epilayers en
dc.subject.other Heterojunctions en
dc.title Strain profiles in overcritical (001) ZnSe/GaAs heteroepitaxial layers en
heal.type journalArticle en
heal.language English en
heal.publicationDate 1999 en
heal.abstract ZnSe layers of various thicknesses have been grown epitaxially on (001)-oriented GaAs substrates by metalorganic vapor phase epitaxy and studied by x-ray diffraction and Raman scattering. Consistent results have been found for the in-plane strains of both, ZnSe layers below and above the critical value of plastic relaxation. The experimental results are well described by strain profiles which are evaluated by an energy model and a geometrical model including the effects of strain and work hardening. The thickness-dependent full widths at half maximum of the x-ray reflections and the Raman resonances are accounted for by assuming uncorrelated misfit dislocations in the layers. (C) 1999 American Institute of Physics. [S0021-8979(99)00813-0]. en
heal.publisher American Institute of Physics Inc., Woodbury, NY, United States en
heal.journalName Journal of Applied Physics en
dc.identifier.isi ISI:000080856300050 en
dc.identifier.volume 86 en
dc.identifier.issue 1 en
dc.identifier.spage 412 en
dc.identifier.epage 417 en

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