Modeling of an Integrated Active Feedback Preamplifier in a 0.25 μm CMOS Technology at Cryogenic Temperatures

Saramad, S; Anelli, G; Bucher, M; Despeisse, M; Jarron, P; Pelloux, N; Rivetti, A

dc.contributor.author	Saramad, S	en
dc.contributor.author	Anelli, G	en
dc.contributor.author	Bucher, M	en
dc.contributor.author	Despeisse, M	en
dc.contributor.author	Jarron, P	en
dc.contributor.author	Pelloux, N	en
dc.contributor.author	Rivetti, A	en
dc.date.accessioned	2014-03-01T01:19:17Z
dc.date.available	2014-03-01T01:19:17Z
dc.date.issued	2003	en
dc.identifier.issn	0018-9499	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15401
dc.subject	Active feed-back	en
dc.subject	Cryogenic temperatures	en
dc.subject	EKV model	en
dc.subject	Front-end amplifier	en
dc.subject	Transistor modeling	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nuclear Science & Technology	en
dc.subject.other	Capacitance	en
dc.subject.other	CMOS integrated circuits	en
dc.subject.other	Cooling	en
dc.subject.other	Integrated circuits	en
dc.subject.other	Active feed back	en
dc.subject.other	Low temperature operations	en
dc.title	Modeling of an Integrated Active Feedback Preamplifier in a 0.25 μm CMOS Technology at Cryogenic Temperatures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/TNS.2003.818236	en
heal.identifier.secondary	http://dx.doi.org/10.1109/TNS.2003.818236	en
heal.language	English	en
heal.publicationDate	2003	en
heal.abstract	This paper describes the modeling of a standard 0.25 mum CMOS technology at cryogenic temperatures. In the first step of the work, the parameters of the EKV v2.6 model were extracted at different temperatures (300, 150, and 70 K). The extracted parameters were then used to optimize the performance of a room temperature designed active feedback front-end preamplifier (AFP) at 130 K. The results show that with a small adjustment of the extracted parameters it is possible to have a reasonable model at low temperatures. By optimizing the bias conditions at 130 K, a fall time down to 1.5 ns and a double pulse resolution of 6.5 ns were measured for NA60 proton beamscope. The proposed approach will also allow a low temperature design optimization for future projects, which will not be possible using only standard models provided by the foundry.	en
heal.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC	en
heal.journalName	IEEE Transactions on Nuclear Science	en
dc.identifier.doi	10.1109/TNS.2003.818236	en
dc.identifier.isi	ISI:000185921800002	en
dc.identifier.volume	50	en
dc.identifier.issue	5 I	en
dc.identifier.spage	1290	en
dc.identifier.epage	1296	en