Simple method for the fabrication of a high dielectric constant metal-oxide-semiconductor capacitor embedded with Pt nanoparticles

Sargentis, Ch; Giannakopoulos, K; Travlos, A; Boukos, N; Tsamakis, D

dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Travlos, A	en
dc.contributor.author	Boukos, N	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T01:25:09Z
dc.date.available	2014-03-01T01:25:09Z
dc.date.issued	2006	en
dc.identifier.issn	0003-6951	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17563
dc.subject.classification	Physics, Applied	en
dc.subject.other	Electron-beam (e-beam) evaporation	en
dc.subject.other	High- k dielectrics	en
dc.subject.other	High-frequency capacitance-voltage (C-V) measurements	en
dc.subject.other	Nanoparticles	en
dc.subject.other	Capacitance	en
dc.subject.other	Deposition	en
dc.subject.other	Dielectric materials	en
dc.subject.other	Electron beams	en
dc.subject.other	Nanostructured materials	en
dc.subject.other	Permittivity	en
dc.subject.other	Platinum	en
dc.subject.other	Thin films	en
dc.subject.other	MOS capacitors	en
dc.title	Simple method for the fabrication of a high dielectric constant metal-oxide-semiconductor capacitor embedded with Pt nanoparticles	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.2174099	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.2174099	en
heal.identifier.secondary	073106	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	We present a simple method for the fabrication of Pt nanoparticles embedded in a high- k dielectric. The nanoparticles are formed during the first deposition stages of a thin Pt layer on a 30 Å Si O2 tunneling layer, at room temperature, performed with electron-beam (e-beam) evaporation of metallic Pt. Then, the nanoparticles are covered, in situ, by a thicker Hf O2 layer, which forms a control oxide. The fabricated nanoparticles have an average diameter of 4.9 nm, sheet density of 3.2× 1012 cm-2 and they present high uniformity in their size. High-frequency capacitance-voltage (C-V) measurements demonstrate that this structure operates as a memory device. © 2006 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Applied Physics Letters	en
dc.identifier.doi	10.1063/1.2174099	en
dc.identifier.isi	ISI:000235393700087	en
dc.identifier.volume	88	en
dc.identifier.issue	7	en