Electrical behavior of memory devices based on fluorene-containing organic thin films

Dimitrakis, P; Normand, P; Tsoukalas, D; Pearson, C; Ahn, JH; Mabrook, MF; Zeze, DA; Petty, MC; Kamtekar, KT; Wang, C; Bryce, MR; Green, M

dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Pearson, C	en
dc.contributor.author	Ahn, JH	en
dc.contributor.author	Mabrook, MF	en
dc.contributor.author	Zeze, DA	en
dc.contributor.author	Petty, MC	en
dc.contributor.author	Kamtekar, KT	en
dc.contributor.author	Wang, C	en
dc.contributor.author	Bryce, MR	en
dc.contributor.author	Green, M	en
dc.date.accessioned	2014-03-01T01:28:14Z
dc.date.available	2014-03-01T01:28:14Z
dc.date.issued	2008	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/18776
dc.subject.classification	Physics, Applied	en
dc.subject.other	Amines	en
dc.subject.other	Electric conductivity	en
dc.subject.other	Electrolysis	en
dc.subject.other	Forming	en
dc.subject.other	Nanoparticles	en
dc.subject.other	Nanostructured materials	en
dc.subject.other	Nanostructures	en
dc.subject.other	Negative resistance	en
dc.subject.other	Organic compounds	en
dc.subject.other	Thick films	en
dc.subject.other	Thin films	en
dc.subject.other	Electrode structures	en
dc.subject.other	Fluorene	en
dc.subject.other	Negative-differential-resistance	en
dc.subject.other	Organic layers	en
dc.subject.other	Organic thin films	en
dc.subject.other	Current voltage characteristics	en
dc.title	Electrical behavior of memory devices based on fluorene-containing organic thin films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.2968551	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.2968551	en
heal.identifier.secondary	044510	en
heal.language	English	en
heal.publicationDate	2008	en
heal.abstract	We report on switching and negative differential resistance (NDR) behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-{4-[5-(4-tert-butylphenyl)- 1,3,4-oxadiazol-2-yl]phenyl}-9,9-dihexyl- N,N -diphenyl-fluoren-2-amine. The addition of gold nanoparticles (0.5 wt %) did not change the switching behavior of thicker film structures; however, devices incorporating the nanoparticles showed more reproducible characteristics. In most cases, a ""forming"" process, in which a large positive voltage was applied to the top Al electrode, was required before the NDR and conductivity switching were observed. Three different electrical conductivity mechanisms have been identified: Poole-Frenkel conductivity in unformed structures, linear current versus voltage characteristics for the ON state in formed devices, and superlinear current versus voltage behavior for the OFF state in formed devices. Models based on metallic filaments or on the injection and storage of charge do not explain all our experimental observations satisfactorily. Instead, an explanation based on the formation of nanocrystalline regions within the thin film is suggested. The devices can be used as two-terminal memory cells operating with unipolar voltage pulses. © 2008 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.2968551	en
dc.identifier.isi	ISI:000259265100100	en
dc.identifier.volume	104	en
dc.identifier.issue	4	en