Optical static RAM cell

Pleros, N; Apostolopoulos, D; Petrantonakis, D; Stamatiadis, C; Avramopoulos, H

dc.contributor.author	Pleros, N	en
dc.contributor.author	Apostolopoulos, D	en
dc.contributor.author	Petrantonakis, D	en
dc.contributor.author	Stamatiadis, C	en
dc.contributor.author	Avramopoulos, H	en
dc.date.accessioned	2014-03-01T01:31:35Z
dc.date.available	2014-03-01T01:31:35Z
dc.date.issued	2009	en
dc.identifier.issn	1041-1135	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19834
dc.subject	Integrated Mach-Zehnder inteferometer	en
dc.subject	Optical flip-flop	en
dc.subject	Optical memory	en
dc.subject	Optical random access memory (RAM)	en
dc.subject	Optical signal processing	en
dc.subject	Semiconductor optical amplifier (SOA)	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Mach-Zehnder	en
dc.subject.other	Optical flip-flop	en
dc.subject.other	Optical memory	en
dc.subject.other	Optical random access memory (RAM)	en
dc.subject.other	Random access memories	en
dc.subject.other	Flip flop circuits	en
dc.subject.other	Optical signal processing	en
dc.subject.other	Radar absorbing materials	en
dc.subject.other	Random access storage	en
dc.subject.other	Semiconductor optical amplifiers	en
dc.subject.other	Semiconductor storage	en
dc.subject.other	Signal processing	en
dc.subject.other	Optical switches	en
dc.title	Optical static RAM cell	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/LPT.2008.2008444	en
heal.identifier.secondary	http://dx.doi.org/10.1109/LPT.2008.2008444	en
heal.identifier.secondary	4	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	We demonstrate an optical static random access memory cell that provides read and write functionality at 5 Gb/s. The circuit comprises a hybridly integrated semiconductor optical amplifier-Mach-Zehnder inteferometer (SOA-MZI) flip-flop serving as the memory unit and two additional SOA-based cross-gain modulation switches for controlling access to the memory cell. © 2009 IEEE.	en
heal.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC	en
heal.journalName	IEEE Photonics Technology Letters	en
dc.identifier.doi	10.1109/LPT.2008.2008444	en
dc.identifier.isi	ISI:000263480100023	en
dc.identifier.volume	21	en
dc.identifier.issue	2	en
dc.identifier.spage	73	en
dc.identifier.epage	75	en