The origin of nucleation and development of porous nanostructure of anodic alumina films

Patermarakis, G

dc.contributor.author	Patermarakis, G	en
dc.date.accessioned	2014-03-01T01:32:11Z
dc.date.available	2014-03-01T01:32:11Z
dc.date.issued	2009	en
dc.identifier.issn	1572-6657	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/20063
dc.subject	Anodic alumina	en
dc.subject	Origin of porous nanostructure	en
dc.subject	Oxide lattice recrystallization	en
dc.subject.classification	Chemistry, Analytical	en
dc.subject.classification	Electrochemistry	en
dc.subject.other	2D-hexagonal	en
dc.subject.other	Anodic alumina	en
dc.subject.other	Anodic alumina film	en
dc.subject.other	Barrier layers	en
dc.subject.other	Charge transfer process	en
dc.subject.other	Chronopotentiometry	en
dc.subject.other	Close packed	en
dc.subject.other	Crack-like	en
dc.subject.other	Finite surface	en
dc.subject.other	Flat films	en
dc.subject.other	Flat surfaces	en
dc.subject.other	Galvanostatics	en
dc.subject.other	High field	en
dc.subject.other	Initial transient stage	en
dc.subject.other	Kinetic models	en
dc.subject.other	Mass-balance method	en
dc.subject.other	Origin of porous nanostructure	en
dc.subject.other	Oxide interfaces	en
dc.subject.other	Oxide lattice recrystallization	en
dc.subject.other	Oxide lattices	en
dc.subject.other	Porous anodic alumina films	en
dc.subject.other	Porous structures	en
dc.subject.other	Recrystallisation	en
dc.subject.other	Recrystallizations	en
dc.subject.other	Self ordering	en
dc.subject.other	SEM	en
dc.subject.other	Solid oxide	en
dc.subject.other	Steady state	en
dc.subject.other	Transient stage	en
dc.subject.other	Wall surfaces	en
dc.subject.other	Aluminum sheet	en
dc.subject.other	Charge transfer	en
dc.subject.other	Ion exchange	en
dc.subject.other	Nanocrystallites	en
dc.subject.other	Nanostructures	en
dc.subject.other	Nucleation	en
dc.subject.other	Oxide films	en
dc.subject.other	Recrystallization (metallurgy)	en
dc.subject.other	Two dimensional	en
dc.subject.other	Alumina	en
dc.title	The origin of nucleation and development of porous nanostructure of anodic alumina films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.jelechem.2009.07.024	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.jelechem.2009.07.024	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	The galvanostatic growth of porous anodic alumina films during the initial transient stages and starting region of steady state was studied by chronopotentiometry, a suitably modelled mass balance method, a high field kinetic model for ions transport in solid oxide and SEM. The results postulate that the nucleation of pores towards the end of the first transient stage results from recrystallization of rare oxide lattice produced in metal vertical bar oxide interface, accommodated with Al lattice, to the surface of initially. at film forming nanocrystallites of denser oxide and crack-like holes nuclei of pores between crystallites. During the second transient stage the successive transformation nuclei -> pockets -> channel-like pores results from simultaneous continuing production of oxide at a slightly declining rate, gradual localization of charge transfer processes from the. at surface to their bottom, recrystallization of oxide in the barrier layer establishing finally a stable gradient of density rising to electrolyte and conversion of barrier layer from. at to close packed shell shaped units accommodating these changes. The enhanced recrystallisation and density rise towards the pore base and wall surface and the necessity for equilibration of stresses inside each barrier layer unit and between neighbouring units yield hemispherical barrier layer units, self-ordering of porous structure approaching the highest possible 2D hexagonal symmetry infinite surface domains and permanent growth of structure in steady state. (C) 2009 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Journal of Electroanalytical Chemistry	en
dc.identifier.doi	10.1016/j.jelechem.2009.07.024	en
dc.identifier.isi	ISI:000273019800006	en
dc.identifier.volume	635	en
dc.identifier.issue	1	en
dc.identifier.spage	39	en
dc.identifier.epage	50	en