Effect of temperature gradients on the first-order Raman spectrum of Si

Raptis, J; Liarokapis, E; Anastassakis, E

dc.contributor.author	Raptis, J	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:38:38Z
dc.date.available	2014-03-01T01:38:38Z
dc.date.issued	1984	en
dc.identifier.issn	00036951	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/22300
dc.subject.other	LASER BEAMS - Effects	en
dc.subject.other	SPECTROSCOPY, RAMAN	en
dc.subject.other	SEMICONDUCTING SILICON	en
dc.title	Effect of temperature gradients on the first-order Raman spectrum of Si	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.94575	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.94575	en
heal.publicationDate	1984	en
heal.abstract	We report the results of measurements of the first-order Raman spectrum of Si under conditions of large temperature inhomogeneities generated by a critically focused cw laser beam. We find that the Stokes and anti-Stokes bands are extensively deformed due to large asymmetric broadenings which develop on the side of the low-frequency shifts. The broadenings are thus attributed to temperature gradients and are shown to be important in determining temperature distributions.	en
heal.journalName	Applied Physics Letters	en
dc.identifier.doi	10.1063/1.94575	en
dc.identifier.volume	44	en
dc.identifier.issue	1	en
dc.identifier.spage	125	en
dc.identifier.epage	127	en