dc.contributor.author | Raptis, J | en |
dc.contributor.author | Liarokapis, E | en |
dc.contributor.author | Anastassakis, E | en |
dc.date.accessioned | 2014-03-01T01:38:38Z | |
dc.date.available | 2014-03-01T01:38:38Z | |
dc.date.issued | 1984 | en |
dc.identifier.issn | 00036951 | en |
dc.identifier.uri | https://dspace.lib.ntua.gr/xmlui/handle/123456789/22300 | |
dc.subject.other | LASER BEAMS - Effects | en |
dc.subject.other | SPECTROSCOPY, RAMAN | en |
dc.subject.other | SEMICONDUCTING SILICON | en |
dc.title | Effect of temperature gradients on the first-order Raman spectrum of Si | en |
heal.type | journalArticle | en |
heal.identifier.primary | 10.1063/1.94575 | en |
heal.identifier.secondary | http://dx.doi.org/10.1063/1.94575 | en |
heal.publicationDate | 1984 | en |
heal.abstract | We report the results of measurements of the first-order Raman spectrum of Si under conditions of large temperature inhomogeneities generated by a critically focused cw laser beam. We find that the Stokes and anti-Stokes bands are extensively deformed due to large asymmetric broadenings which develop on the side of the low-frequency shifts. The broadenings are thus attributed to temperature gradients and are shown to be important in determining temperature distributions. | en |
heal.journalName | Applied Physics Letters | en |
dc.identifier.doi | 10.1063/1.94575 | en |
dc.identifier.volume | 44 | en |
dc.identifier.issue | 1 | en |
dc.identifier.spage | 125 | en |
dc.identifier.epage | 127 | en |
Files | Size | Format | View |
---|---|---|---|
There are no files associated with this item. |