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Effect of temperature gradients on the first-order Raman spectrum of Si

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dc.contributor.author Raptis, J en
dc.contributor.author Liarokapis, E en
dc.contributor.author Anastassakis, E en
dc.date.accessioned 2014-03-01T01:38:38Z
dc.date.available 2014-03-01T01:38:38Z
dc.date.issued 1984 en
dc.identifier.issn 00036951 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/22300
dc.subject.other LASER BEAMS - Effects en
dc.subject.other SPECTROSCOPY, RAMAN en
dc.subject.other SEMICONDUCTING SILICON en
dc.title Effect of temperature gradients on the first-order Raman spectrum of Si en
heal.type journalArticle en
heal.identifier.primary 10.1063/1.94575 en
heal.identifier.secondary http://dx.doi.org/10.1063/1.94575 en
heal.publicationDate 1984 en
heal.abstract We report the results of measurements of the first-order Raman spectrum of Si under conditions of large temperature inhomogeneities generated by a critically focused cw laser beam. We find that the Stokes and anti-Stokes bands are extensively deformed due to large asymmetric broadenings which develop on the side of the low-frequency shifts. The broadenings are thus attributed to temperature gradients and are shown to be important in determining temperature distributions. en
heal.journalName Applied Physics Letters en
dc.identifier.doi 10.1063/1.94575 en
dc.identifier.volume 44 en
dc.identifier.issue 1 en
dc.identifier.spage 125 en
dc.identifier.epage 127 en


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