Decrease of the lateral distribution of interstitials in Silicon-On-Insulator structures

Tsamis, C; Tsoukalas, D; Normand, P

dc.contributor.author	Tsamis, C	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Normand, P	en
dc.date.accessioned	2014-03-01T01:43:05Z
dc.date.available	2014-03-01T01:43:05Z
dc.date.issued	1995	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24038
dc.subject	Point Defect	en
dc.subject	Silicon On Insulator	en
dc.title	Decrease of the lateral distribution of interstitials in Silicon-On-Insulator structures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0167-9317(95)00098-S	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0167-9317(95)00098-S	en
heal.publicationDate	1995	en
heal.abstract	In this work we present a series of experimental results performed in Silicon-On-Insulator material, where Oxidation Stacking Faults are used to monitor the silicon interstitial distribution after an oxidation process. These results demonstrate that the lateral distribution of these point defects show an important decrease as compared with bulk silicon. This decrease mostly depends on the thickness of the Si	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/0167-9317(95)00098-S	en