Raman study of photostructural changes in amorphous Ge x Sb 0.4− x S 0.6 1 Originally presented at the 17th International Conference on Amorphous Semiconductors (ICAMS-17), Budapest, 25–29 August 1997. 1

Kotsalas, I; Papadimitriou, D; Raptis, C; Vlcek, M; Frumar, M

dc.contributor.author	Kotsalas, I	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Raptis, C	en
dc.contributor.author	Vlcek, M	en
dc.contributor.author	Frumar, M	en
dc.date.accessioned	2014-03-01T01:46:53Z
dc.date.available	2014-03-01T01:46:53Z
dc.date.issued	1998	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/25084
dc.subject	Amorphous Semiconductors	en
dc.subject	Band Gap	en
dc.subject	Free Volume	en
dc.subject	Raman Spectra	en
dc.title	Raman study of photostructural changes in amorphous Ge x Sb 0.4− x S 0.6 1 Originally presented at the 17th International Conference on Amorphous Semiconductors (ICAMS-17), Budapest, 25–29 August 1997. 1	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0022-3093(97)00493-6	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0022-3093(97)00493-6	en
heal.publicationDate	1998	en
heal.abstract	Raman spectra of amorphous GexSb0.4−xS0.6 films and bulk samples have been measured for several values of x. The observed Raman bands are due to heteropolar M–S (M=Ge, Sb) bonds in the GeS4 tetrahedra and SbS3 pyramids, as well as homopolar (defective) M–M bonds whose population increases with increasing x. Illumination of Ge-rich ternary films by band gap light induces photostructural	en
heal.journalName	Journal of Non-crystalline Solids	en
dc.identifier.doi	10.1016/S0022-3093(97)00493-6	en