Raman study of nitrogen-doped ZnSSe/GaAs epilayers

Kontos, AG; Raptis, YS; Strassburg, M; Pohl, UW; Bimberg, D

dc.contributor.author	Kontos, AG	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Strassburg, M	en
dc.contributor.author	Pohl, UW	en
dc.contributor.author	Bimberg, D	en
dc.date.accessioned	2014-03-01T02:42:20Z
dc.date.available	2014-03-01T02:42:20Z
dc.date.issued	2003	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/30946
dc.subject	Chemical vapor deposition (CVD)	en
dc.subject	Heterostructures	en
dc.subject	Raman scattering	en
dc.subject	Selenides	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Band structure	en
dc.subject.other	Carrier concentration	en
dc.subject.other	Charge carriers	en
dc.subject.other	Chemical vapor deposition	en
dc.subject.other	Heterojunctions	en
dc.subject.other	Interfaces (materials)	en
dc.subject.other	Metallorganic vapor phase epitaxy	en
dc.subject.other	Raman scattering	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Semiconducting gallium arsenide	en
dc.subject.other	Semiconductor doping	en
dc.subject.other	Stoichiometry	en
dc.subject.other	X ray diffraction	en
dc.subject.other	X ray spectroscopy	en
dc.subject.other	Epilayers	en
dc.subject.other	Semiconducting zinc compounds	en
dc.title	Raman study of nitrogen-doped ZnSSe/GaAs epilayers	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/S0040-6090(03)01195-1	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0040-6090(03)01195-1	en
heal.language	English	en
heal.publicationDate	2003	en
heal.abstract	N-doped ZnSSe/GaAs epilayers were grown by metalorganic vapor phase epitaxy, using monomer (tBu)(2)Se or dimer Me(2)se(2) precursors. Structural characteristics of the epilayers were obtained by analyzing the X-ray diffraction patterns and the Raman frequencies of the Znse- and ZnS-like, LO and TO modes. Thereby, inferior structural properties were found for layers grown using the dimer precursor. Raman coupled plasmon-LO-phonon modes were observed from the GaAs interface area due to photoexcited carriers and were analyzed in terms of band bending effects. (C) 2002 Elsevier Science B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/S0040-6090(03)01195-1	en
dc.identifier.isi	ISI:000182500500038	en
dc.identifier.volume	428	en
dc.identifier.issue	1-2	en
dc.identifier.spage	185	en
dc.identifier.epage	189	en