Quality Control of Chalcopyrite Semiconductors by Raman Spectroscopic Techniques

Xue, C; Papadimitriou, D; Esser, N

dc.contributor.author	Xue, C	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Esser, N	en
dc.date.accessioned	2014-03-01T02:49:34Z
dc.date.available	2014-03-01T02:49:34Z
dc.date.issued	2003	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34616
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0141453585&partnerID=40&md5=a84452973f92a10887c2421f3350183f	en
dc.subject	Anharmonic effects	en
dc.subject	CuGaSe2-MOCVD layers	en
dc.subject	Raman scattering	en
dc.subject	Structural properties	en
dc.subject.other	Defects	en
dc.subject.other	Energy gap	en
dc.subject.other	Metallorganic chemical vapor deposition	en
dc.subject.other	Phonons	en
dc.subject.other	Pumping (laser)	en
dc.subject.other	Quality control	en
dc.subject.other	Raman scattering	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Phonon frequency shifts	en
dc.subject.other	Semiconductor growth	en
dc.title	Quality Control of Chalcopyrite Semiconductors by Raman Spectroscopic Techniques	en
heal.type	conferenceItem	en
heal.publicationDate	2003	en
heal.abstract	CuGaSe2 MOCVD grown layers, with applications in photovoltaics, were characterized by Raman spectroscopy. Roman spectra were excited by laser light near the material band gap energy (1.73 eV at 20 K). The high quality of Raman spectra, excited by Ar+ -pumped Ti-Sapphire laser in the near infrared (NIR), enables studies of a defect related phonon mode at 199 cm -1, which in the Ga-rich modifications is much more intensive than in the Curich. By studying the temperature dependence of the Raman spectra, it is found, that among the CuGaSe2 modes, the phonon mode at 199 cm-1 exhibits the strongest frequency shift and line broadening. Since both line broadening and frequency shift have their origin in anharmonic effects associated with the presence of defects in the crystal lattice, it is concluded that the 199 cm-1 lattice vibration can be used as indicator of material quality in CuGaSe2 based solar-cells.	en
heal.journalName	Proceedings of the International Symposium on Test and Measurement	en
dc.identifier.volume	5	en
dc.identifier.spage	3514	en
dc.identifier.epage	3516	en