Effects of Device Aging on Microelectronics Radiation Response and Reliability

Fleetwood, D; Rodgers, M; Tsetseris, L; Zhou, X; Batyrev, I; Wang, S; Schrimpf, R; Pantelides, S

dc.contributor.author	Fleetwood, D	en
dc.contributor.author	Rodgers, M	en
dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Zhou, X	en
dc.contributor.author	Batyrev, I	en
dc.contributor.author	Wang, S	en
dc.contributor.author	Schrimpf, R	en
dc.contributor.author	Pantelides, S	en
dc.date.accessioned	2014-03-01T02:50:15Z
dc.date.available	2014-03-01T02:50:15Z
dc.date.issued	2006	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34993
dc.subject	Elevated Temperature	en
dc.subject	Integrated Circuit	en
dc.subject	Mos Device	en
dc.subject	Negative Bias Temperature Instability	en
dc.title	Effects of Device Aging on Microelectronics Radiation Response and Reliability	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ICMEL.2006.1650901	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ICMEL.2006.1650901	en
heal.publicationDate	2006	en
heal.abstract	Recent work is reviewed that shows that MOS and bipolar device radiation response can change significantly with aging time after device fabrication and/or packaging. Effects include changes in radiation response due to burn-in, pre-irradiation elevated temperature stress, and/or long-term storage. These changes are attributed experimentally and theoretically to the motion and reactions of water and other hydrogen-related species. Similar hydrogen-related	en
heal.journalName	International Conference on Microelectronics	en
dc.identifier.doi	10.1109/ICMEL.2006.1650901	en