Growth of anodic SiO2 films

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dc.contributor.author Panagopoulos, Chr en
dc.contributor.author Badekas, Hel en
dc.date.accessioned 2014-03-01T01:07:29Z
dc.date.available 2014-03-01T01:07:29Z
dc.date.issued 1989 en
dc.identifier.issn 0167-577X en
dc.identifier.uri http://hdl.handle.net/123456789/10020
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Physics, Applied en
dc.subject.other Crystals--Growing en
dc.subject.other Silica en
dc.subject.other Oxide Films en
dc.subject.other Potentiostatic Technique en
dc.subject.other Silicon Oxide en
dc.subject.other Semiconducting Silicon en
dc.title Growth of anodic SiO2 films en
heal.type journalArticle en
heal.identifier.primary 10.1016/0167-577X(89)90106-7 en
heal.identifier.secondary http://dx.doi.org/10.1016/0167-577X(89)90106-7 en
heal.language English en
heal.publicationDate 1989 en
heal.abstract During the n-silicon anodic oxidation under constant voltage conditions, the anodic current density was observed to increase with increasing applied voltage. The thickness of grown silicon oxide was also found to increase with increasing applied voltage for a constant value of oxidation time and with increasing oxidation time for a constant value of applied voltage. © 1989. en
heal.publisher ELSEVIER SCIENCE BV en
heal.journalName Materials Letters en
dc.identifier.doi 10.1016/0167-577X(89)90106-7 en
dc.identifier.isi ISI:A1989AG86900005 en
dc.identifier.volume 8 en
dc.identifier.issue 6-7 en
dc.identifier.spage 212 en
dc.identifier.epage 215 en

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