Growth of anodic SiO2 films

Panagopoulos, Chr; Badekas, Hel

dc.contributor.author	Panagopoulos, Chr	en
dc.contributor.author	Badekas, Hel	en
dc.date.accessioned	2014-03-01T01:07:29Z
dc.date.available	2014-03-01T01:07:29Z
dc.date.issued	1989	en
dc.identifier.issn	0167-577X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10020
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Crystals--Growing	en
dc.subject.other	Silica	en
dc.subject.other	Oxide Films	en
dc.subject.other	Potentiostatic Technique	en
dc.subject.other	Silicon Oxide	en
dc.subject.other	Semiconducting Silicon	en
dc.title	Growth of anodic SiO2 films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0167-577X(89)90106-7	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0167-577X(89)90106-7	en
heal.language	English	en
heal.publicationDate	1989	en
heal.abstract	During the n-silicon anodic oxidation under constant voltage conditions, the anodic current density was observed to increase with increasing applied voltage. The thickness of grown silicon oxide was also found to increase with increasing applied voltage for a constant value of oxidation time and with increasing oxidation time for a constant value of applied voltage. © 1989.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Materials Letters	en
dc.identifier.doi	10.1016/0167-577X(89)90106-7	en
dc.identifier.isi	ISI:A1989AG86900005	en
dc.identifier.volume	8	en
dc.identifier.issue	6-7	en
dc.identifier.spage	212	en
dc.identifier.epage	215	en