High-frequency current oscillations in solid dielectrics

Dervos, C; Bourkas, PD; Kayafas, EA

dc.contributor.author	Dervos, C	en
dc.contributor.author	Bourkas, PD	en
dc.contributor.author	Kayafas, EA	en
dc.date.accessioned	2014-03-01T01:07:29Z
dc.date.available	2014-03-01T01:07:29Z
dc.date.issued	1989	en
dc.identifier.issn	0022-3727	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10022
dc.subject.classification	Physics, Applied	en
dc.subject.other	Current Oscillations	en
dc.subject.other	Negative Differential Resistance	en
dc.subject.other	Solid Dielectrics	en
dc.subject.other	Electric Fields	en
dc.subject.other	Electric Insulating Materials	en
dc.subject.other	Semiconductor Materials	en
dc.subject.other	Dielectric Materials	en
dc.title	High-frequency current oscillations in solid dielectrics	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0022-3727/22/2/014	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0022-3727/22/2/014	en
heal.language	English	en
heal.publicationDate	1989	en
heal.abstract	Experimental evidence is provided that common industrial organic insulators (phenol-impregnated pressboard, bakelite) may exhibit negative differential resistance. Insulators have been subjected to high non-uniform electric fields with maximum values which between 0.2 MV cm-1 and 1.2 MV cm-1 and, according to experimental data, the time-averaged I-V characteristics showed a distinct N-type NDR region, followed by an S-type NDR region, for electric fields near the pre-breakdown region. Various impulse voltages have been applied to solid dielectric and periodic current pulses were received by the anode electrode. An attempt has been made to interpret and correlate the above results with similar phenomena which occur in semiconductors with a negative differential resistance.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Journal of Physics D: Applied Physics	en
dc.identifier.doi	10.1088/0022-3727/22/2/014	en
dc.identifier.isi	ISI:A1989T332300014	en
dc.identifier.volume	22	en
dc.identifier.issue	2	en
dc.identifier.spage	316	en
dc.identifier.epage	322	en