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Raman probing of thermally induced effects on La2-xSrxCuO4 single crystals

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dc.contributor.author Raptis, C en
dc.contributor.author McGreevy, RL en
dc.contributor.author Haycock, PW en
dc.contributor.author Chen, C en
dc.contributor.author Wanklyn, BM en
dc.date.accessioned 2014-03-01T01:07:39Z
dc.date.available 2014-03-01T01:07:39Z
dc.date.issued 1989 en
dc.identifier.issn 0921-4534 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/10089
dc.relation.uri http://www.scopus.com/inward/record.url?eid=2-s2.0-0024751873&partnerID=40&md5=53e52f1673eb3583d2c62704272d7b51 en
dc.subject.classification Physics, Applied en
dc.subject.other Ceramic Materials en
dc.subject.other Lanthanum Compounds en
dc.subject.other Raman Scattering en
dc.subject.other High Temperature Superconductors en
dc.subject.other Lanthanum Strontium Copper Oxides en
dc.subject.other Oxide Superconductors en
dc.subject.other Single Crystals en
dc.subject.other Superconducting Materials en
dc.title Raman probing of thermally induced effects on La2-xSrxCuO4 single crystals en
heal.type journalArticle en
heal.language English en
heal.publicationDate 1989 en
heal.abstract We have investigated the effects of long oxygen annealing of flux grown La2-xSrxCuO4 single crystals, using their Raman scatterin as a probe. The as-grown crystals display very weak Raman activity, whereas the annealed crystals show three well defined Raman peaks which disappear upon polishing a layer of ∼10 μm from the surface, indicating a low oxygen diffusion rate from surface to bulk. The Raman scattering exhibited by the annealed crystals is attributed to surface defects or/and new phases formed during the annealing. After annealing, the crystals were found to display superconductivity at 8 K. © 1989. en
heal.publisher ELSEVIER SCIENCE BV en
heal.journalName Physica C: Superconductivity and its applications en
dc.identifier.isi ISI:A1989AY88100013 en
dc.identifier.volume 161 en
dc.identifier.issue 1 en
dc.identifier.spage 83 en
dc.identifier.epage 87 en


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