dc.contributor.author |
Loizos, Z |
en |
dc.contributor.author |
Spyrellis, N |
en |
dc.contributor.author |
Maurin, G |
en |
dc.contributor.author |
Pottier, D |
en |
dc.date.accessioned |
2014-03-01T01:07:39Z |
|
dc.date.available |
2014-03-01T01:07:39Z |
|
dc.date.issued |
1989 |
en |
dc.identifier.issn |
0022-0728 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/10097 |
|
dc.subject |
Thin Film |
en |
dc.subject.classification |
Chemistry, Analytical |
en |
dc.subject.classification |
Electrochemistry |
en |
dc.subject.other |
Semiconducting Cadmium Compounds--Thin Films |
en |
dc.subject.other |
Semiconducting Films--Electrodeposition |
en |
dc.subject.other |
Cadmium Chalcogenides |
en |
dc.subject.other |
Cathodic Electrodeposition |
en |
dc.subject.other |
Photoelectrochemical Cells |
en |
dc.subject.other |
Semiconductor Electrodes |
en |
dc.subject.other |
Electrodes, Electrochemical |
en |
dc.title |
Semiconducting CdSex, Te1-x thin films prepared by electrodeposition |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1016/0022-0728(89)85147-2 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1016/0022-0728(89)85147-2 |
en |
heal.language |
English |
en |
heal.publicationDate |
1989 |
en |
heal.abstract |
CdTe, CdSe and CdSexTe1-x semiconducting compounds were prepared by cathodic electrodeposition from an acid sulphate solution containing TeO2 and H2SeO3 in various amounts. The composition of the layers, their crystal structure, morphology, band-gap width and their photoresponse in a photoelectrochemical (PEC) cell were investigated as functions of the electrolyte composition and the deposition potential. It is shown that smooth crystallized CdSexTe1-x thin films can be obtained only for small concentrations of H2SeO3 in the bath and in a restricted potential range corresponding to the under-potential deposition of cadmium. © 1989. |
en |
heal.publisher |
ELSEVIER SCIENCE SA LAUSANNE |
en |
heal.journalName |
Journal of Electroanalytical Chemistry |
en |
dc.identifier.doi |
10.1016/0022-0728(89)85147-2 |
en |
dc.identifier.isi |
ISI:A1989AU85500014 |
en |
dc.identifier.volume |
269 |
en |
dc.identifier.issue |
2 |
en |
dc.identifier.spage |
399 |
en |
dc.identifier.epage |
410 |
en |