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Semiconducting CdSex, Te1-x thin films prepared by electrodeposition

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dc.contributor.author Loizos, Z en
dc.contributor.author Spyrellis, N en
dc.contributor.author Maurin, G en
dc.contributor.author Pottier, D en
dc.date.accessioned 2014-03-01T01:07:39Z
dc.date.available 2014-03-01T01:07:39Z
dc.date.issued 1989 en
dc.identifier.issn 0022-0728 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/10097
dc.subject Thin Film en
dc.subject.classification Chemistry, Analytical en
dc.subject.classification Electrochemistry en
dc.subject.other Semiconducting Cadmium Compounds--Thin Films en
dc.subject.other Semiconducting Films--Electrodeposition en
dc.subject.other Cadmium Chalcogenides en
dc.subject.other Cathodic Electrodeposition en
dc.subject.other Photoelectrochemical Cells en
dc.subject.other Semiconductor Electrodes en
dc.subject.other Electrodes, Electrochemical en
dc.title Semiconducting CdSex, Te1-x thin films prepared by electrodeposition en
heal.type journalArticle en
heal.identifier.primary 10.1016/0022-0728(89)85147-2 en
heal.identifier.secondary http://dx.doi.org/10.1016/0022-0728(89)85147-2 en
heal.language English en
heal.publicationDate 1989 en
heal.abstract CdTe, CdSe and CdSexTe1-x semiconducting compounds were prepared by cathodic electrodeposition from an acid sulphate solution containing TeO2 and H2SeO3 in various amounts. The composition of the layers, their crystal structure, morphology, band-gap width and their photoresponse in a photoelectrochemical (PEC) cell were investigated as functions of the electrolyte composition and the deposition potential. It is shown that smooth crystallized CdSexTe1-x thin films can be obtained only for small concentrations of H2SeO3 in the bath and in a restricted potential range corresponding to the under-potential deposition of cadmium. © 1989. en
heal.publisher ELSEVIER SCIENCE SA LAUSANNE en
heal.journalName Journal of Electroanalytical Chemistry en
dc.identifier.doi 10.1016/0022-0728(89)85147-2 en
dc.identifier.isi ISI:A1989AU85500014 en
dc.identifier.volume 269 en
dc.identifier.issue 2 en
dc.identifier.spage 399 en
dc.identifier.epage 410 en


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