A semiconductively preionised TEA nitrogen oscillator-amplifier laser system

Serafetinides, AA; Tsikrikas, GN

dc.contributor.author	Serafetinides, AA	en
dc.contributor.author	Tsikrikas, GN	en
dc.date.accessioned	2014-03-01T01:07:47Z
dc.date.available	2014-03-01T01:07:47Z
dc.date.issued	1990	en
dc.identifier.issn	0030-4018	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10166
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0025522116&partnerID=40&md5=0f1bb0105608cbeb261fde9cef5d976d	en
dc.subject.classification	Optics	en
dc.subject.other	Gases - Ionization	en
dc.subject.other	Laser Beams	en
dc.subject.other	Semiconductor Materials	en
dc.subject.other	Oscillator-Amplifier Nitrogen Laser System	en
dc.subject.other	Semiconductor Preionizing Technique	en
dc.subject.other	Tea Nitrogen Laser	en
dc.subject.other	Lasers, Gas	en
dc.title	A semiconductively preionised TEA nitrogen oscillator-amplifier laser system	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1990	en
heal.abstract	The gain characteristics of a semiconductively preionised TEA nitrogen oscillator-amplifier laser system were investigated and a small signal gain value of 53 dB and a gain value of 15 dB at maximum output energy were obtained. This novel design system provided laser pulses of low beam divergence of 1.0→1.5 mrad, with output energy of 0.5 mJ, pulses duration of 7 ns, repetition rate up to 80 Hz and excellent shot to shot reproducibility of 2%. © 1990.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Optics Communications	en
dc.identifier.isi	ISI:A1990EM32700011	en
dc.identifier.volume	79	en
dc.identifier.issue	6	en
dc.identifier.spage	448	en
dc.identifier.epage	454	en