D.C. Reactive magnetron sputtering of silicon in hydrogen at low substrate temperatures

Avaritsiotis, JN; Roditi, E

dc.contributor.author	Avaritsiotis, JN	en
dc.contributor.author	Roditi, E	en
dc.date.accessioned	2014-03-01T01:07:51Z
dc.date.available	2014-03-01T01:07:51Z
dc.date.issued	1990	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10203
dc.subject	Magnetron Sputtering	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Electric Properties	en
dc.subject.other	Films - Metallic	en
dc.subject.other	Hydrogen	en
dc.subject.other	Optical Properties	en
dc.subject.other	Photoconductivity	en
dc.subject.other	Dark Conductivity	en
dc.subject.other	Reactive Magnetron Sputtering	en
dc.subject.other	Silicon and Alloys	en
dc.title	D.C. Reactive magnetron sputtering of silicon in hydrogen at low substrate temperatures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0040-6090(90)90111-P	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0040-6090(90)90111-P	en
heal.language	English	en
heal.publicationDate	1990	en
heal.abstract	The optical and electrical properties of hydrogenated amorphous silicon films deposited by d.c. planar magnetron sputtering both at room temperature and at 100 °C have been investigated for a range of H2 mass flows and r.f.-induced substrate biases. The optical absorption coefficient has been determined as a function of photon energy in the range 2-2.6 eV. The optical gap has been found to increase from 1.7 to 1.9 eV with increasing H2:Ar mass flow ratio and substrate voltage (30-300 V). Investigation of the effect of hydrogen mass flow on the deposition rate revealed a behaviour similar to that observed in the case of reactive sputtering of metals, but with negligible pressure instabilities. Films suitable for optoelectronic applications were prepared, exhibiting ratios of room temperature photoconductivity to dark conductivity of the order of 104 before and after annealing at 200 °C in vacuum. It is shown that films with such properties can be obtained only when deposition conditions favour reactions taking place mainly on the substrate. © 1990.	en
heal.publisher	ELSEVIER SCIENCE SA LAUSANNE	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/0040-6090(90)90111-P	en
dc.identifier.isi	ISI:A1990DH61200008	en
dc.identifier.volume	187	en
dc.identifier.issue	1	en
dc.identifier.spage	77	en
dc.identifier.epage	90	en