D.C. Reactive magnetron sputtering of silicon in hydrogen at low substrate temperatures

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dc.contributor.author Avaritsiotis, JN en
dc.contributor.author Roditi, E en
dc.date.accessioned 2014-03-01T01:07:51Z
dc.date.available 2014-03-01T01:07:51Z
dc.date.issued 1990 en
dc.identifier.issn 0040-6090 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/10203
dc.subject Magnetron Sputtering en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Materials Science, Coatings & Films en
dc.subject.classification Physics, Applied en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other Electric Properties en
dc.subject.other Films - Metallic en
dc.subject.other Hydrogen en
dc.subject.other Optical Properties en
dc.subject.other Photoconductivity en
dc.subject.other Dark Conductivity en
dc.subject.other Reactive Magnetron Sputtering en
dc.subject.other Silicon and Alloys en
dc.title D.C. Reactive magnetron sputtering of silicon in hydrogen at low substrate temperatures en
heal.type journalArticle en
heal.identifier.primary 10.1016/0040-6090(90)90111-P en
heal.identifier.secondary http://dx.doi.org/10.1016/0040-6090(90)90111-P en
heal.language English en
heal.publicationDate 1990 en
heal.abstract The optical and electrical properties of hydrogenated amorphous silicon films deposited by d.c. planar magnetron sputtering both at room temperature and at 100 °C have been investigated for a range of H2 mass flows and r.f.-induced substrate biases. The optical absorption coefficient has been determined as a function of photon energy in the range 2-2.6 eV. The optical gap has been found to increase from 1.7 to 1.9 eV with increasing H2:Ar mass flow ratio and substrate voltage (30-300 V). Investigation of the effect of hydrogen mass flow on the deposition rate revealed a behaviour similar to that observed in the case of reactive sputtering of metals, but with negligible pressure instabilities. Films suitable for optoelectronic applications were prepared, exhibiting ratios of room temperature photoconductivity to dark conductivity of the order of 104 before and after annealing at 200 °C in vacuum. It is shown that films with such properties can be obtained only when deposition conditions favour reactions taking place mainly on the substrate. © 1990. en
heal.journalName Thin Solid Films en
dc.identifier.doi 10.1016/0040-6090(90)90111-P en
dc.identifier.isi ISI:A1990DH61200008 en
dc.identifier.volume 187 en
dc.identifier.issue 1 en
dc.identifier.spage 77 en
dc.identifier.epage 90 en

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