Elastic distortions of strained layers grown epitaxially in arbitrary directions

Anastassakis, E

dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:08:21Z
dc.date.available	2014-03-01T01:08:21Z
dc.date.issued	1991	en
dc.identifier.issn	0022-0248	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10426
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0026366908&partnerID=40&md5=59d1fc88362b377fa669707ecf333f1b	en
dc.subject.classification	Crystallography	en
dc.subject.other	Elasticity	en
dc.subject.other	Films--Strain	en
dc.subject.other	Mathematical Techniques--Matrix Algebra	en
dc.subject.other	X-Rays--Diffraction	en
dc.subject.other	Elastic Distortion	en
dc.subject.other	Crystals	en
dc.title	Elastic distortions of strained layers grown epitaxially in arbitrary directions	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1991	en
heal.abstract	We consider the elastic distortions which are due to lattice mismatch between epitaxial layers and substrates. The growth is assumed to take place in an arbitrary crystallographic direction. Explicit forms are obtained for the deformation of the unit cell and its two components, i.e., the angular distortions (symmetric strain) and the rigid-body rotation (antisymmetric strain). The correction factors which connect the relaxed lattice constants of the layer with observables from X-ray diffractometry are obtained in analytical forms. As shown through specific applications, the results agree with those obtained numerically in the literature. © 1991.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Journal of Crystal Growth	en
dc.identifier.isi	ISI:A1991GV93300015	en
dc.identifier.volume	114	en
dc.identifier.issue	4	en
dc.identifier.spage	647	en
dc.identifier.epage	655	en