Electrochemical synthesis of semiconducting CdSe thin films

Loizos, Z; Spyrellis, N; Maurin, G

dc.contributor.author	Loizos, Z	en
dc.contributor.author	Spyrellis, N	en
dc.contributor.author	Maurin, G	en
dc.date.accessioned	2014-03-01T01:08:21Z
dc.date.available	2014-03-01T01:08:21Z
dc.date.issued	1991	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10427
dc.subject	Thin Film	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Electrodeposition	en
dc.subject.other	Electrodes, Electrochemical	en
dc.subject.other	Solar Cells	en
dc.subject.other	Cadmium Selenide	en
dc.subject.other	Semiconducting Cadmium Compounds	en
dc.title	Electrochemical synthesis of semiconducting CdSe thin films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0040-6090(91)90500-W	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0040-6090(91)90500-W	en
heal.language	English	en
heal.publicationDate	1991	en
heal.abstract	Semiconducting CdSe thin films were synthesized by cathodic electrodeposition from an aqueous acid solution. Alloy formation occurs when the growth rate is limited by selenium ion mass transport and when the cadmium is underpotentially deposited. The composition and the physical properties of the asgrown layers are very sensitive to the selenium concentration of the solution and to the applied potential. CdSe films always have a zinc blende structure (instead of the normal wurtzite structure) with a strong (111) preferred orientation. It is shown that the best characteristics (stoichiometry, crystallinity, band gap width, etc.) are obtained with low selenium concentrations and in a narrow potential range. By using these appropriate preparation conditions, it will be possible to reduce the chemical and physical post-treatments generally applied to these kinds of semiconducting thin films in order to increase their solar energy conversion performances in solid or liquid junction cells. © 1991.	en
heal.publisher	ELSEVIER SCIENCE SA LAUSANNE	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/0040-6090(91)90500-W	en
dc.identifier.isi	ISI:A1991GK35700016	en
dc.identifier.volume	204	en
dc.identifier.issue	1	en
dc.identifier.spage	139	en
dc.identifier.epage	149	en