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Kinetics of growth of porous anodic Al2O3 films on A1 metal

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dc.contributor.author Patermarakis, G en
dc.contributor.author Lenas, P en
dc.contributor.author Karavassilis, Ch en
dc.contributor.author Papayiannis, G en
dc.date.accessioned 2014-03-01T01:08:24Z
dc.date.available 2014-03-01T01:08:24Z
dc.date.issued 1991 en
dc.identifier.issn 0013-4686 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/10471
dc.subject aluminium en
dc.subject anodizing en
dc.subject growth en
dc.subject kinetics en
dc.subject oxide en
dc.subject porous en
dc.subject.classification Electrochemistry en
dc.subject.other ALUMINUM en
dc.title Kinetics of growth of porous anodic Al2O3 films on A1 metal en
heal.type journalArticle en
heal.identifier.primary 10.1016/0013-4686(91)85162-Z en
heal.identifier.secondary http://dx.doi.org/10.1016/0013-4686(91)85162-Z en
heal.language English en
heal.publicationDate 1991 en
heal.abstract The kinetics of growth of porous anodic aluminium oxide films on Al metal, anodized galvanostatically in a non-stirred bath solution 15% w/v H2SO4 at various current densities (5-75 mA/cm2) and bath temperatures (20-40-degrees-C), were studied. The model m = kit - lambda-1t exp (lambda-2t) was found to be valid for all the anodization conditions chosen and for anodization time intervals shorter than those beyond which limiting constant values of film mass and thickness are obtained. The model shows that the true shape of pores is that of a trucated cone, whereas parameters lambda-1 and lambda-2 are directly related to the surface area of the pore base section (lambda-1 = 4(-1) kin-pi-D0(2)) and the dissolution rate of pore wall oxide (lambda-2 = 2k(d)D0(-1)). With the aid of the model it was proven that, during anodization, oxide dissolution at the depth of pores is essentially a field-assisted process; while pore wall oxide dissolution is a first-order reaction, thermally activated, with an activation energy of 78.6 kJ/mol; electrolyte concentration inside the pores increases linearly with true current density (C = C0 + ai(t)). The open circuit oxide dissolution rate was found to be 0.52-4.1 angstrom/min for anodization temperatures of 20-40-degrees-C. Also, by applying the model, information was obtained on the oxide's main structural characteristics such as concentration of cells and pores, cell mean width, pore base mean diameter, thickness of barrier layer, total and specific real surface, porosity, etc. en
heal.publisher PERGAMON-ELSEVIER SCIENCE LTD en
heal.journalName Electrochimica Acta en
dc.identifier.doi 10.1016/0013-4686(91)85162-Z en
dc.identifier.isi ISI:A1991FC88600044 en
dc.identifier.volume 36 en
dc.identifier.issue 3-4 en
dc.identifier.spage 709 en
dc.identifier.epage 725 en


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