Short-range order and microstructure in hydrogenated amorphous silicon

Danesh, P; Pantchev, B; Savatinova, I; Liarokapis, E; Raptis, YS

dc.contributor.author	Danesh, P	en
dc.contributor.author	Pantchev, B	en
dc.contributor.author	Savatinova, I	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Raptis, YS	en
dc.date.accessioned	2014-03-01T01:08:32Z
dc.date.available	2014-03-01T01:08:32Z
dc.date.issued	1991	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10555
dc.subject.classification	Physics, Applied	en
dc.subject.other	STRUCTURAL RELAXATION	en
dc.subject.other	RAMAN-SCATTERING	en
dc.subject.other	ENERGY BARRIER	en
dc.subject.other	GLOW-DISCHARGE	en
dc.subject.other	A-SI	en
dc.subject.other	ALLOYS	en
dc.subject.other	FILMS	en
dc.subject.other	GE	en
dc.title	Short-range order and microstructure in hydrogenated amorphous silicon	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.347537	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.347537	en
heal.language	English	en
heal.publicationDate	1991	en
heal.abstract	An experimental study has been made on the relationship between short-range order and microstructure in hydrogenated amorphous silicon films. The properties of the material have been varied by applying rf power of different magnitudes. The change in the short-range order has been characterized by Raman scattering measurements. Microstructure has been determined by means of field assisted ion exchange technique. The observed correlation between the two structural length scales suggests that the presence of dihydride groups in these materials is a key factor for the release of the silicon network strain.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.347537	en
dc.identifier.isi	ISI:A1991FP40100039	en
dc.identifier.volume	69	en
dc.identifier.issue	11	en
dc.identifier.spage	7656	en
dc.identifier.epage	7659	en