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Structural and semiconducting characteristics of electrodeposited cadmium chalcogenide thin films

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dc.contributor.author Loizos, Z en
dc.contributor.author Spyrellis, N en
dc.contributor.author Maurin, G en
dc.contributor.author Pottier, D en
dc.date.accessioned 2014-03-01T01:08:33Z
dc.date.available 2014-03-01T01:08:33Z
dc.date.issued 1991 en
dc.identifier.issn 0257-8972 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/10570
dc.subject Thin Film en
dc.subject.classification Materials Science, Coatings & Films en
dc.subject.classification Physics, Applied en
dc.subject.other Microscopic Examination--Scanning Electron Microscopy en
dc.subject.other Semiconducting Selenium Compounds--Electrodeposition en
dc.subject.other Semiconducting Tellurium Compounds--Electrodeposition en
dc.subject.other Solar Cells--Fabrication en
dc.subject.other X-Rays--Diffraction en
dc.subject.other Cadmium Chalcogenide en
dc.subject.other Cathodic Electrodeposition en
dc.subject.other Energy-Dispersive X-Ray Local Analysis en
dc.subject.other Solar Energy Conversion en
dc.subject.other Semiconducting Cadmium Compounds en
dc.title Structural and semiconducting characteristics of electrodeposited cadmium chalcogenide thin films en
heal.type journalArticle en
heal.identifier.primary 10.1016/0257-8972(91)90233-M en
heal.identifier.secondary http://dx.doi.org/10.1016/0257-8972(91)90233-M en
heal.language English en
heal.publicationDate 1991 en
heal.abstract Thin polycrystalline layers of CdTe, CdSe and their mixed compound CdSexTe1x-semiconducting materials suitable for solar energy conversion-were prepared by cathodic electrodeposition from a simple aqueous electrolyte onto a transparent rotating disc electrode. The crystal structure, composition, band gap width and photoresponse of the layers were studied as a function of the electrochemical parameters and bath concentration. All deposits have a cubic blende structure and in most cases are n-type semiconductors. It is possible to determine the operating conditions giving layers of the best quality and, in the case of the mixed compound, having the required band gap width. © 1991. en
heal.publisher ELSEVIER SCIENCE SA LAUSANNE en
heal.journalName Surface and Coatings Technology en
dc.identifier.doi 10.1016/0257-8972(91)90233-M en
dc.identifier.isi ISI:A1991FU72800036 en
dc.identifier.volume 45 en
dc.identifier.issue 1-3 en
dc.identifier.spage 273 en
dc.identifier.epage 279 en


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