dc.contributor.author |
Loizos, Z |
en |
dc.contributor.author |
Spyrellis, N |
en |
dc.contributor.author |
Maurin, G |
en |
dc.contributor.author |
Pottier, D |
en |
dc.date.accessioned |
2014-03-01T01:08:33Z |
|
dc.date.available |
2014-03-01T01:08:33Z |
|
dc.date.issued |
1991 |
en |
dc.identifier.issn |
0257-8972 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/10570 |
|
dc.subject |
Thin Film |
en |
dc.subject.classification |
Materials Science, Coatings & Films |
en |
dc.subject.classification |
Physics, Applied |
en |
dc.subject.other |
Microscopic Examination--Scanning Electron Microscopy |
en |
dc.subject.other |
Semiconducting Selenium Compounds--Electrodeposition |
en |
dc.subject.other |
Semiconducting Tellurium Compounds--Electrodeposition |
en |
dc.subject.other |
Solar Cells--Fabrication |
en |
dc.subject.other |
X-Rays--Diffraction |
en |
dc.subject.other |
Cadmium Chalcogenide |
en |
dc.subject.other |
Cathodic Electrodeposition |
en |
dc.subject.other |
Energy-Dispersive X-Ray Local Analysis |
en |
dc.subject.other |
Solar Energy Conversion |
en |
dc.subject.other |
Semiconducting Cadmium Compounds |
en |
dc.title |
Structural and semiconducting characteristics of electrodeposited cadmium chalcogenide thin films |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1016/0257-8972(91)90233-M |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1016/0257-8972(91)90233-M |
en |
heal.language |
English |
en |
heal.publicationDate |
1991 |
en |
heal.abstract |
Thin polycrystalline layers of CdTe, CdSe and their mixed compound CdSexTe1x-semiconducting materials suitable for solar energy conversion-were prepared by cathodic electrodeposition from a simple aqueous electrolyte onto a transparent rotating disc electrode. The crystal structure, composition, band gap width and photoresponse of the layers were studied as a function of the electrochemical parameters and bath concentration. All deposits have a cubic blende structure and in most cases are n-type semiconductors. It is possible to determine the operating conditions giving layers of the best quality and, in the case of the mixed compound, having the required band gap width. © 1991. |
en |
heal.publisher |
ELSEVIER SCIENCE SA LAUSANNE |
en |
heal.journalName |
Surface and Coatings Technology |
en |
dc.identifier.doi |
10.1016/0257-8972(91)90233-M |
en |
dc.identifier.isi |
ISI:A1991FU72800036 |
en |
dc.identifier.volume |
45 |
en |
dc.identifier.issue |
1-3 |
en |
dc.identifier.spage |
273 |
en |
dc.identifier.epage |
279 |
en |