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A model for reactive magnetron sputtering

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dc.contributor.author Tsiogas, CD en
dc.contributor.author Avaritsiotis, JN en
dc.date.accessioned 2014-03-01T01:08:37Z
dc.date.available 2014-03-01T01:08:37Z
dc.date.issued 1992 en
dc.identifier.issn 0042-207X en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/10611
dc.subject Magnetron Sputtering en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Physics, Applied en
dc.subject.other Chemical Reactions - Reaction Kinetics en
dc.subject.other Sputtering - Chemical Reactions en
dc.subject.other Magnetron Sputtering en
dc.subject.other Reactive Sputtering en
dc.subject.other Sputtering en
dc.title A model for reactive magnetron sputtering en
heal.type journalArticle en
heal.identifier.primary 10.1016/0042-207X(92)90262-U en
heal.identifier.secondary http://dx.doi.org/10.1016/0042-207X(92)90262-U en
heal.language English en
heal.publicationDate 1992 en
heal.abstract A steady-state model for the reactive sputtering process in a symmetrical planar magnetron configuration is presented which takes the specific system geometry into consideration. Further to the simulation of the well-known hysteresis effect and its consequences in the composition of the composition of the deposited film, the model allows for the calculation of the radial compositional distribution of the growing film as a function of the distance between the target and the condensation surface. The proposed model introduces a reactive gas profile across the reaction zone (instead of considering it to be constant), to account for the gettering action of both the magnetron target and condensation surface at relatively high sputtering rates and short target-to-substrate separations. The possibility of introducing reactive gas through the centre of the magnetron surface is also examined and the effects on the stoichiometry of the film as well as on the stability of the system are presented. en
heal.publisher PERGAMON-ELSEVIER SCIENCE LTD en
heal.journalName Vacuum en
dc.identifier.doi 10.1016/0042-207X(92)90262-U en
dc.identifier.isi ISI:A1992HJ93000006 en
dc.identifier.volume 43 en
dc.identifier.issue 3 en
dc.identifier.spage 203 en
dc.identifier.epage 211 en


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