A reactive sputtering process model for symmetrical planar diode systems

Avaritsiotis, JN; Tsiogas, CD

dc.contributor.author	Avaritsiotis, JN	en
dc.contributor.author	Tsiogas, CD	en
dc.date.accessioned	2014-03-01T01:08:38Z
dc.date.available	2014-03-01T01:08:38Z
dc.date.issued	1992	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10620
dc.subject	Process Model	en
dc.subject	Reactive Sputtering	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Films--Preparation	en
dc.subject.other	Mathematical Statistics--Monte Carlo Methods	en
dc.subject.other	Semiconductor Diodes	en
dc.subject.other	Planar Diode Systems	en
dc.subject.other	Reactive Sputtering	en
dc.subject.other	Metals And Alloys	en
dc.title	A reactive sputtering process model for symmetrical planar diode systems	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0040-6090(92)90004-U	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0040-6090(92)90004-U	en
heal.language	English	en
heal.publicationDate	1992	en
heal.abstract	A quantitative model for the reactive sputtering process in a symmetrical planar configuration is presented which takes specific system geometry into consideration. Scattering effects have been included using a Monte Carlo approach. The model allows for the calculation of the radial compositional distribution of the growing film as a function of the distance between the target and the condensation surface, further to the simulation of the well-known hysteresis effect and its consequences in the composition of the deposited film. One of the main features of the proposed model is that it offers the possibility of introducing a reactive gas profile across the reaction zone (instead of considering it to be constant), to account for the gettering action of both target and condensation surface at relatively high sputtering rates and short target-to-substrate separations. Calculated results concerning system stability have been found to be in good qualitative agreement with experimental results published in the literature. © 1992.	en
heal.publisher	ELSEVIER SCIENCE SA LAUSANNE	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/0040-6090(92)90004-U	en
dc.identifier.isi	ISI:A1992HL63500003	en
dc.identifier.volume	209	en
dc.identifier.issue	1	en
dc.identifier.spage	17	en
dc.identifier.epage	25	en