Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces

Resch, U; Esser, N; Raptis, YS; Richter, W; Wasserfall, J; Forster, A; Westwood, DI

dc.contributor.author	Resch, U	en
dc.contributor.author	Esser, N	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Richter, W	en
dc.contributor.author	Wasserfall, J	en
dc.contributor.author	Forster, A	en
dc.contributor.author	Westwood, DI	en
dc.date.accessioned	2014-03-01T01:08:40Z
dc.date.available	2014-03-01T01:08:40Z
dc.date.issued	1992	en
dc.identifier.issn	0039-6028	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10641
dc.subject	Arsenic	en
dc.subject	Electronic Properties	en
dc.subject.classification	Chemistry, Physical	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Arsenic	en
dc.subject.other	Crystal structure	en
dc.subject.other	Desorption	en
dc.subject.other	Electron spectroscopy	en
dc.subject.other	Electronic properties	en
dc.subject.other	Molecular beam epitaxy	en
dc.subject.other	Passivation	en
dc.subject.other	Surface properties	en
dc.subject.other	Decapped surfaces	en
dc.subject.other	Electron energy loss spectroscopy	en
dc.subject.other	Thermal desorption	en
dc.subject.other	Semiconducting gallium arsenide	en
dc.title	Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0039-6028(92)91351-B	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0039-6028(92)91351-B	en
heal.language	English	en
heal.publicationDate	1992	en
heal.abstract	The passivation properties and thermal stability of As on GaAs(100) were studied under ultra-high vacuum (UHV) conditions for As caps of different thicknesses and storage times in air. The As desorption was monitored by mass spectrometry (QMS) and the substrate surface quality by means of Auger electron spectroscopy (AES), electron diffraction (LEED) and Raman spectroscopy (RS). Additional desorption experiments were performed in an oven in N2 atmosphere. These samples were then investigated by spatially resolved Raman spectroscopy under atmospheric conditions. The Raman spectra of the air exposed samples show that the cap consists of an amorphous As layer with small As2O3 crystallites on top. AES investigations reveal in addition strong carbon contaminations. Arsenic desorption in UHV takes place in two steps, a first one at around 160-degrees-C which can be attributed to the desorption of the As2O3 Crystallites and a second one at around 350-degrees-C due to the desorption of the amorphous As layer. From 360-degrees-C on with further increasing temperature (1 X 1), (2 X 4) and (4 X 1) reconstructions are observed by LEED. The band bendings at the surfaces as determined by Raman scattering were found to be not systematically related to the differently reconstructed surfaces. Residual carbon contaminations were found after Arsenic desorption in many cases, whereas the surfaces are always free of oxygen contaminations.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Surface Science	en
dc.identifier.doi	10.1016/0039-6028(92)91351-B	en
dc.identifier.isi	ISI:A1992HY64300033	en
dc.identifier.volume	269-270	en
dc.identifier.issue	C	en
dc.identifier.spage	797	en
dc.identifier.epage	803	en