Design of two devices for biaxial stresses and their application to silicon wafers

Liarokapis, E; Richter, W

dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Richter, W	en
dc.date.accessioned	2014-03-01T01:08:45Z
dc.date.available	2014-03-01T01:08:45Z
dc.date.issued	1992	en
dc.identifier.issn	0957-0233	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10668
dc.subject.classification	Engineering, Multidisciplinary	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.other	MODULUS	en
dc.subject.other	STRAIN	en
dc.title	Design of two devices for biaxial stresses and their application to silicon wafers	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0957-0233/3/4/001	en
heal.identifier.secondary	001	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0957-0233/3/4/001	en
heal.language	English	en
heal.publicationDate	1992	en
heal.abstract	Two devices have been constructed for the development of biaxial stresses and the study of deformation potentials on thin layers. In the first device hydrostatic pressure was employed to develop a two-dimensional stress environment on thin silicon wafers. The deformation of the plates was found to be related to the third root of the pressure applied, in good agreement with theory. The second apparatus used a central force for the bending of the wafer, and the stresses, as detected from the frequency shift of the silicon phonon line in the Raman spectra, were confined to a small area of the plate. In both devices and analytic relation between the radius of curvature at the centre of the wafer and the stresses developed was established.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Measurement Science and Technology	en
dc.identifier.doi	10.1088/0957-0233/3/4/001	en
dc.identifier.isi	ISI:A1992HL24700001	en
dc.identifier.volume	3	en
dc.identifier.issue	4	en
dc.identifier.spage	347	en
dc.identifier.epage	351	en