Linear, electronically tunable resistor

Tsividis, Y; Vavelidis, K

dc.contributor.author	Tsividis, Y	en
dc.contributor.author	Vavelidis, K	en
dc.date.accessioned	2014-03-01T01:08:55Z
dc.date.available	2014-03-01T01:08:55Z
dc.date.issued	1992	en
dc.identifier.issn	0013-5194	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10732
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0027111013&partnerID=40&md5=78e81ccae617f474a1bd6517f71de5b0	en
dc.subject	RESISTORS	en
dc.subject	FIELD-EFFECT TRANSISTORS	en
dc.subject	INTEGRATED CIRCUITS	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.other	Amplifiers (electronic)	en
dc.subject.other	Electric filters	en
dc.subject.other	Integrated circuits	en
dc.subject.other	Linearization	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Electronically tunable resistors	en
dc.subject.other	Linear resistors	en
dc.subject.other	Tunable resistors	en
dc.subject.other	Resistors	en
dc.title	Linear, electronically tunable resistor	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1992	en
heal.abstract	A technique for converting a MOSFET into a highly linear, electronically tunable resistor is described. The key to the linearisation achieved is the application of voltages across the gate and across the body, in such a way that the gate-channel and body-channel potentials remain constant all along the channel. Measurements show distortion levels of less than -75 dB for signal amplitudes of 6 V peak to peak.	en
heal.publisher	IEE-INST ELEC ENG	en
heal.journalName	Electronics Letters	en
dc.identifier.isi	ISI:A1992KD32500026	en
dc.identifier.volume	28	en
dc.identifier.issue	25	en
dc.identifier.spage	2303	en
dc.identifier.epage	2305	en