Modeling reactive sputtering process in symmetrical planar direct current magnetron systems

Tsiogas, CD; Avaritsiotis, JN

dc.contributor.author	Tsiogas, CD	en
dc.contributor.author	Avaritsiotis, JN	en
dc.date.accessioned	2014-03-01T01:08:57Z
dc.date.available	2014-03-01T01:08:57Z
dc.date.issued	1992	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10744
dc.subject.classification	Physics, Applied	en
dc.subject.other	THIN-FILM STOICHIOMETRY	en
dc.subject.other	TITANIUM NITRIDE	en
dc.subject.other	PARTIAL-PRESSURE	en
dc.subject.other	DEPOSITION RATE	en
dc.subject.other	FLOW	en
dc.title	Modeling reactive sputtering process in symmetrical planar direct current magnetron systems	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.350573	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.350573	en
heal.language	English	en
heal.publicationDate	1992	en
heal.abstract	A steady-state model for the reactive sputtering process in a symmetrical planar magnetron configuration is presented which takes the specific system geometry into consideration. Further to the simulation of the well known hysteresis effect and its consequences in the composition of the deposited film, the model allows for the calculation of the radial film thickness and compositional distributions of the growing film as a function of the distance between the target and the condensation surface. The proposed model introduces for the first time two realistic assumptions: a reactive gas profile across the reaction zone and a current density distribution. The case of introducing reactive gas through the center of the magnetron surface is also examined and the effects on the stoichiometry of the film as well as on the stability of the system are presented. Experimental results for film thickness profile for several values of the target diameter-to-substrate separation ratio show excellent agreement with simulated results.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.350573	en
dc.identifier.isi	ISI:A1992HV47100079	en
dc.identifier.volume	71	en
dc.identifier.issue	10	en
dc.identifier.spage	5173	en
dc.identifier.epage	5182	en