Monte Carlo simulation of high rate reactive sputtering of tin oxide in planar d.c. magnetron systems

Tsiogas, CD; Avaritsiotis, JN

dc.contributor.author	Tsiogas, CD	en
dc.contributor.author	Avaritsiotis, JN	en
dc.date.accessioned	2014-03-01T01:08:57Z
dc.date.available	2014-03-01T01:08:57Z
dc.date.issued	1992	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10747
dc.subject	Monte Carlo Simulation	en
dc.subject	Reactive Sputtering	en
dc.subject	Tin Oxide	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Argon	en
dc.subject.other	Monte Carlo methods	en
dc.subject.other	Oxides	en
dc.subject.other	Magnetron sputtering	en
dc.subject.other	Reactive sputtering	en
dc.subject.other	Sputtering	en
dc.title	Monte Carlo simulation of high rate reactive sputtering of tin oxide in planar d.c. magnetron systems	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0040-6090(92)90756-2	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0040-6090(92)90756-2	en
heal.language	English	en
heal.publicationDate	1992	en
heal.abstract	The transport process of high rate sputtered tin atoms from the target to the substate, crossing an argon-oxygen plasma in a cylindrically symmetrical planar magnetron configuration, is investigated and a model is proposed based on the Monte Carlo technique. The effects of the inert (argon) and reactive (O2) gas partial pressures and the target-to-substrate separation on thickness distribution and electrical conductivity of the deposited films are examined. Oxide formation ""on the way"" from the target to the substrate is taken into consideration in the proposed model together with surface reactions on substrate and target. Tin oxide films deposited with the aid of an optical emission monitoring system, in order to control the degree of oxidation, exhibited thickness and resistance profiles that are in good agreement with the calculated material and compositional distribution. © 1992.	en
heal.publisher	ELSEVIER SCIENCE SA LAUSANNE	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/0040-6090(92)90756-2	en
dc.identifier.isi	ISI:A1992JZ12400042	en
dc.identifier.volume	219	en
dc.identifier.issue	1-2	en
dc.identifier.spage	270	en
dc.identifier.epage	277	en